A novel approach to extracting small-signal model parameters of silicon MOSFET's

Lee, S.; Yu, Hong; Kim, C.S.; Koo, Jin Gun; Nam, Kyoung Won

doi:10.1109/75.556037

Cited by 93 publications

(38 citation statements)

References 5 publications

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“…RF characterization methods allow the extraction of each series resistance value (R ge , R de , R se ) [13][14][15][16][17][18][19][20], whereas only the total source-drain resistance (R se 1R de ) can be extracted with DC methods [5][6][7][8][9][10][11][12]. Some DC methods presented in the literature [21,22] indicate the possibility to determine independently R se and R de ; however of course, R ge cannot be determined and thus they are not adequate for RF modeling.…”

Section: Introductionmentioning

confidence: 99%

New RF extrinsic resistances extraction procedure for deep‐submicron MOS transistors

Tinoco

Raskin

2009

Int J Numerical Modelling

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SUMMARYThe modeling of MOS transistors used for RF applications needs the definition of a lumped equivalent circuit where the intrinsic device and series extrinsic resistances are properly evaluated. The model accuracy depends on the extraction precision of each intrinsic lumped element. In order to determine the intrinsic device behavior, it is necessary to first remove the series extrinsic resistances. For this reason their extraction becomes critical for the modeling of MOS transistors in RF circuit design. Several extraction methods have been proposed; nevertheless, the measurement noise strongly affects the obtained results. The method proposed by Bracale and co-workers is the most robust extraction procedure against measurement noise, but fails to predict correctly the series extrinsic resistances for deep-submicron devices. For those reasons, we deeply analyze the method proposed by Bracale in order to understand and then overcome its limitations. Based on those analyses, a robust extraction method for deep-submicron devices is proposed.

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Section: Introductionmentioning

confidence: 99%

New RF extrinsic resistances extraction procedure for deep‐submicron MOS transistors

Tinoco

Raskin

2009

Int J Numerical Modelling

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“…The most widely used RF methods to extract the extrinsic series resistances have been proposed in the literature by (Lovelace et al, 1994), (Torres-Torres et al, 2003), (Raskin et al, 1998) and (Bracale et al, 2000). It is worth to mention that some of those RF methods require the extraction of intermediate parameters before the series resistances extraction (Pascht et al, 2002) and other methods require complex mathematical optimization routines (Lee et al, 1997). Such characteristics make them more sensitive to measurement noise and difficult to apply.…”

Section: Extraction Of the Series Extrinsic Resistances And Inductancesmentioning

confidence: 99%

Advanced RF MOSFET´s for Microwave and Millimeter Wave Applications: RF Characterization Issues

Tinoco¹,

Raskin²

2010

Microwave and Millimeter Wave Technologies From Photonic Bandgap Devices to Antenna and Applications

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“…Several studies [5]- [7] have presented resistance extraction methods for SOI metal-oxide-semiconductor field effect transistors (MOSFETs) based on those developed for their bulk counterparts [8], [9]. Among these approaches, the zero method [5], [8] developed under the zero condition (i.e., 0) is attractive because it simplifies the corresponding equivalent circuit and avoids the error caused by the non-quasi-static (NQS) effect [7].…”

Section: On the Rf Extrinsic Resistance Extractionmentioning

confidence: 99%

On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs

Wang

Chen

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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Abstract-We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.Index Terms-Metal-oxide-semiconductor field effect transistors (MOSFETs), radio frequency (RF), resistance extraction, silicon-on-insulator (SOI) technology.

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A novel approach to extracting small-signal model parameters of silicon MOSFET's

Cited by 93 publications

References 5 publications

New RF extrinsic resistances extraction procedure for deep‐submicron MOS transistors

New RF extrinsic resistances extraction procedure for deep‐submicron MOS transistors

Advanced RF MOSFET´s for Microwave and Millimeter Wave Applications: RF Characterization Issues

On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs

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