A Novel Approach to Suppress the Collector-Induced Barrier Lowering Effect in Narrow Mesa IGBTs

Luo, Peng; Long, Hong Yao; Narayanan, E.M. Sankara

doi:10.1109/led.2018.2854363

Cited by 6 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…𝐼 𝑠𝑐 (𝑖 − 1)) 1 + 𝑔 𝑓𝑠 (𝑖). 𝑅 𝑠 (5) In these equations, 𝑉 𝑔𝑒 is the gate-emitter voltage, 𝐼 𝑠𝑐 is the short-circuit current, 𝑉 𝑠 is the gate-driver voltage, and 𝑅 𝑠 is the sampling resistor. The relationship between the short-circuit current of the IGBT and sampling resistor (𝑅 𝑠 ) is given (5).…”

Section: Clamp Mode Snubbermentioning

confidence: 99%

Voltage Balancing of Series IGBTs in Short-Circuit Conditions

Zarghani

Peyghami

Iannuzzo

et al. 2022

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

This paper proposes a scheme for balancing the voltage of series-connected Insulated Gate Bipolar Transistors (IGBTs), which is also very effective under short-circuit conditions. An optimized clamp-mode snubber is proposed, including an active-driver to balance the currents of the IGBTs during short-circuit, which in turn allows a considerable reduction of the snubber capacitance. The approach is proven to be effective under short-circuit conditions by a maximum 10% voltage imbalance and a negligible difference in the current values. The effectiveness of the proposed approach is demonstrated through simulations in PSPICE software and experimental tests performed at 2000 V.

show abstract

Section: Clamp Mode Snubbermentioning

confidence: 99%

Voltage Balancing of Series IGBTs in Short-Circuit Conditions

Zarghani

Peyghami

Iannuzzo

et al. 2022

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…In that case, the conductivity modulation occurs in the inversion layer so that both the electron and hole densities, as well as the collector current, become highly significant. Hence, due to the collector induced barrier lowering effect caused by the narrow mesa, the poor coping capacity against the short‐circuit event would be the obstacle to the further development of narrow mesa technology [51, 52].…”

Section: Technology Trend For More Reliable Power Semiconductors Ofmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

IET Power Electronics

View full text Add to dashboard Cite

This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

show abstract

“…Moreover, the low channel mobility of 4H-SiC IGBTs results in high channel resistance [14,15,17], which cannot be ignored in the analysis of on-state performance. The channel resistance can be calculated with (21), assuming that channel parameters are constant across the voltage range considered, and the channel layers are not conductivity modulated even in the narrow mesa IGBTs [49,50]. Table II summarizes the channel parameters for Si-IGBTs and 4H-SiC IGBTs.…”

Section: Parameters (Tj = 25 ºC / 125 ºC) Si-igbts 4h-sic Igbtsmentioning

confidence: 99%