A novel blanket annealing process to achieve highly transparent and conducting Al doped ZnO thin films: Its mechanism and application in perovskite solar cells

Ghosh, Shuvaraj; Mallick, Arindam; Dou, Benjia; Hest, Maikel F.A.M. van; Garner, Sean; Basak, Durga

doi:10.1016/j.solener.2018.09.017

Cited by 44 publications

(29 citation statements)

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“…For annealing in reducing ambience (without excess Zn) films, there is a probability of reduction of O i related acceptor-like defects increasing the carrier concentration [3]. However, annealing in excess Zn causes Zn diffusion through V Zn by decrease of acceptor-like compensating defects and increase of the conductivity of the films [7]. Enhanced mobility rules out the probability of formation of zinc interstitial (Zn i ) defects (carrier scattering defects) [7].…”

Section: Resultsmentioning

confidence: 99%

“…However, annealing in excess Zn causes Zn diffusion through V Zn by decrease of acceptor-like compensating defects and increase of the conductivity of the films [7]. Enhanced mobility rules out the probability of formation of zinc interstitial (Zn i ) defects (carrier scattering defects) [7].…”

Section: Resultsmentioning

confidence: 99%

“…The targets were prepared by proportionate mixing of In 2 O 3 (purity > 99.9%) and SnO 2 (purity > 99%) powders separately with ZnO (purity > 99%) powder using a ceramic approach. The details of the deposition process have been reported earlier [7]. The films with thickness of ≈ 350 nm were further annealed at 550 • C for 1 hour separately in a reducing (Ar + 10%H 2 ) with and without excess Zn ambient [7].…”

Section: Methodsmentioning

confidence: 99%

“…The details of the deposition process have been reported earlier [7]. The films with thickness of ≈ 350 nm were further annealed at 550 • C for 1 hour separately in a reducing (Ar + 10%H 2 ) with and without excess Zn ambient [7]. The films are named as IZO_AG, IZO_AM, IZO_Zn for IZO series, and SZO_AG, SZO_AM, SZO_Zn for SZO series, respectively for as-grown, annealed in reducing ambient without and with excess Zn.…”

Section: Methodsmentioning

confidence: 99%

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An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films

Ghosh

Basak

2019

Acta Phys. Pol. A

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Herein, we report a study on the role of acceptor-like VZn (zinc vacancy) donor compensating defects in ZnO by studying In and Sn doped RF magnetron sputtered ZnO thin films prepared under exactly similar growth and post-growth annealing conditions. Sn dopants in ZnO films have been activated largely as evidenced by a more than two orders of magnitude increase in the carrier concentration as compared to the as-grown films while In dopants are activated by only 7 times after a post-growth annealing in excess Zn. Interestingly, an enhanced mobility due to annealing further strengthen the feasible compensation between the dopants and the acceptor-like defects.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films

Ghosh

Basak

2019

Acta Phys. Pol. A

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“…Electrical properties of ZnO thin films doped with materials like Cu are very useful for optoelectronic applications [8] however efficiency of such films found limited due to formation of donor compensating point defects [9]. Coulomb interactions between dopant and acceptor-like defects, such as oxygen interstitial lead to bound complexes [10,11]. The combination of p-type and n-type material reduces the recombination rate of photo generated electrons and holes [12].…”

Section: Introductionmentioning

confidence: 99%

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

Shukla¹,

Patel²

2020

Nanosystems: Phys. Chem. Math.

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Pure ZnO and copper (IB group), sodium (IA group) and potassium (IA group) and doped ZnO thin films on glass substrate by chemical bath deposition method have been studied for Hall effect measurements, resistivity, Raman and photoluminescence (PL). The influence of dopant content on carrier concentration, electrical resistivity, and Hall mobility of the thin films are analyzed. Electrical conductivity measurements of ZnO are carried out by two probe method and activation energy for the electrical conductivity of pure and doped ZnO is found out. The Raman scattering of the pure ZnO and doped ZnO shows the first and second orders of polar and non-polar modes. Raman spectra confirms the hexagonal wurtzite structure of pure and doped ZnO with E 2 (high) mode at 439 cm −1 and presence of other possible defects. Photoluminescence (PL) at room temperature results indicate the emission occurs at close band lines and the outcomes are identified with a few inherent imperfections in the doped ZnO thin films. The PL results demonstrate the upgraded optoelectronic properties, specifically, the carriers for long life span is executed by the oxygen opportunities. Raman spectroscopy and photoluminescence confirm existence of zinc interstitials (Zni) as well as oxygen vacancies (Vo). Resistivity as low as 15 Ω-cm, Hall mobility as high as 6.2 cm 2 /Vs and effective carrier concentration as high as 1.70×10 17 e − /cm 3 have been obtained.

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Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO₄Thin Films‐Based Transparent Photovoltaic Device

Ghosh,

Patel,

Choi

et al. 2023

Adv Elect Materials

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BiVO4, a narrow bandgap material (2.5 eV), has been widely explored for photocatalytic applications, but its applications in the optoelectronic field are unexplored. This work explores BiVO4 for photovoltaic devices using the oxygen vacancies mediated co‐sputtered Ti‐doped BiVO4 (Ti:BiVO4) that exhibits on‐site power production by photovoltaics and see‐through features. The structural, chemical, and optical properties of Ti:BiVO4 are investigated for heterojunction formation with p‐type NiO film. The sputtering power of Ti plays a significant role in improving the light absorption capability by increasing oxygen vacancy concentration, enhancing the device performance. The devices show an open‐circuit voltage value of 676 mV and a short‐circuit current density value of 4.83 mA cm−2 with a maximum power production value of 122.2 µW under UV illumination of intensity 53.1 mW cm−2. The obtained device performances correlate with the Ti dopant's deposition power that tunes the structural and optical properties of BiVO4 films. Moreover, in self‐powered mode, the fabricated devices show a fast photoresponse speed of 0.8 ms with a high detectivity value of 2.22 × 1012 Jones. This work establishes the suitability of co‐sputtered Ti:BiVO4 for the next generation of transparent self‐powered optoelectronic devices.

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A novel blanket annealing process to achieve highly transparent and conducting Al doped ZnO thin films: Its mechanism and application in perovskite solar cells

Cited by 44 publications

References 72 publications

An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films

An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO₄Thin Films‐Based Transparent Photovoltaic Device

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A novel blanket annealing process to achieve highly transparent and conducting Al doped ZnO thin films: Its mechanism and application in perovskite solar cells

Cited by 44 publications

References 72 publications

An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films

An Insight into the Influence of Donor Compensating Defects in Doped ZnO Thin Films

Effect of doping concentration on optical and electrical properties of intrinsic n-type ZnO (i-ZnO) and (Cu, Na and K) doped p-type ZnO thin films grown by chemical bath deposition method

Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO4Thin Films‐Based Transparent Photovoltaic Device

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Oxygen Vacancies Mediated Co‐Sputtered Ti‐Doped BiVO₄Thin Films‐Based Transparent Photovoltaic Device