A novel crystal defect in epitaxial wurtzite gallium nitride film

Wang, S.Q; Liu, C.P

doi:10.1016/s0167-577x(98)00159-1

Cited by 2 publications

(2 citation statements)

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“…For classification, the model is named as (1120) DBM1. The existence of this kind of structure in epitaxial GaN was observed in an incipient dislocation, experimentally [9]. On the base of (1120) DBM1 structure, an additional 1/2[0001] shift will eliminate the error atom bounds on the boundary.…”

Section: The (1120) Domain Boundary Models With the Same Stacking Ordmentioning

confidence: 96%

“…Vermaut et al and Xin et al proposed a double-position boundary model by a defect vector R = 1/2 [1101] for GaN {1120} planar defect [7,8]. Wang et al have demonstrated that the like-atom bonding {1120} domain boundary with defect vector R = 1/2 [1100] can also exist in the film [9]. Some others suggested the inversion domain boundary model of the {1120} defect [10].…”

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confidence: 99%

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A theoretical study on various models for the domain boundaries in epitaxial GaN films

Wang

2000

Applied Physics A: Materials Science & Processing

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Various domain boundaries that are found in epitaxial Wurtzite GaN films were studied by molecular dynamics simulation. The Ewald summation algorithm and Keating potential model are adopted to calculate the longrange Coulomb interaction and the short-range bonding force in the semiconductor system, respectively. The research results show that the domain formation energies of (1100) and (1120) boundaries are significantly different. The latter ones have general quite higher formation energies than the formers. The like-atom (i.e. atoms of the same kind) bonding domain boundaries (LABDB) have higher formation energies than their counterparts of unlike-atom (i.e. atoms of different kinds) bonding domain boundaries (UABDB) in all GaN (1100) and (1120) interfaces. The UABDB structures are all stable while most of the LABDB are unstable. The advantage and the limitation of Keating potential model in Molecular Dynamics simulation for covalent crystal are discussed. PACS: 61.70; 61.16.D; 68.55.LnGallium nitride (GaN) attracts extensive research interests both in science and in industry for it is an important material in the manufacture of photoelectric device, such as blue/green light-emitting diode, laser diode, etc. The successful application of the material may cause revolutionary changes of the human world in illumination and imaging apparatuses. A significant character of GaN is that it can still give high-efficiency luminescence even under a high density of crystal defects. This phenomenon seems in paradox with the common opinion that lattice defects introduce nonradiative recombination centres in III-V semiconductor and the recombination centres reduce the efficiency and lifetime of the photoelectric devices. The puzzle imposes an urgent demand for an in-depth study of the defect structures and their roles in the light-emission process of GaN crystal.

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Section: The (1120) Domain Boundary Models With the Same Stacking Ordmentioning

confidence: 96%

mentioning

confidence: 99%