A novel defect detection optical system using 199-nm light source for EUVL mask

Hirano, Ryoichi; Kikuiri, Nobutaka; Hirono, Masatoshi; Ogawa, Riki; Sigemura, Hiroyuki; Takahara, Kenichi; Hashimoto, Hajime

doi:10.1117/12.848679

Cited by 12 publications

(8 citation statements)

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“…So called "Phase defect" will exist in multi layer, and will be printed on wafer with even very small height, less than 2nm, on the surface. Inspection tool vendors have been trying to capture the defect with optical source tool and EB tool [2,4,5,6]. However, we think that we need actinic, with EUV light source, blank defect inspection tool to capture the "Phase defect" at the stage of EUV mask blank manufacturing.…”

Section: -2 Defect Inspection Methods and Evaluation Resultsmentioning

confidence: 99%

NGL masks: development status and issue

Hayashi

Abe

Shimomura³

et al. 2011

27th European Mask and Lithography Conference

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Section: -2 Defect Inspection Methods and Evaluation Resultsmentioning

confidence: 99%

NGL masks: development status and issue

Hayashi

Abe

Shimomura³

et al. 2011

27th European Mask and Lithography Conference

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“…EUV dedicated mask infrastructures, especially defect inspection, repair and re-qualification tools have been developing mostly through global consortia, such as SEMATECH in US, Selete and EIDEC in Japan [4][5] [6]. Before those tools will be released to the production market, we may use the tools with extended current technologies as bridge tools.…”

Section: Euvl Mask Related Tool Infrastructurementioning

confidence: 99%

Mask readiness for EUVL pilot line

2012

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“…OPI already has capability of inspecting 32nm HP pattern of EUV mask. Moreover, there is no big doubt that OPI of 19x nm wavelength will meet the requirement of 22 nm HP pattern EUV mask inspection employing polarized illumination and off-axis illumination technology [5,6,7]. Optimization of film structure of EUV mask may also help to boost sensitivity [7].…”

Section: Introductionmentioning

confidence: 97%

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

Shimomura¹,

Inazuki

Abe

et al. 2010

SPIE Proceedings

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Fabrication of defect free EUV mask is one of the most critical roadblocks for implementing EUV lithography into semiconductor high volume manufacturing for 22nm half-pitch (HP) node and beyond. At the same time, development of quality assurance process for the defect free EUV mask is also another critical challenge we need to address before the mass production. Inspection tools act important role in quality assurance process to ensure the defect free EUV mask. We are currently evaluating two types of inspection system: optical inspection (OPI) system and electron beam inspection (EBI) system [1, 2]. While OPI system is sophisticated technology and has an advantage in throughput, EBI system is superior in sensitivity and extendability to even small pattern.We evaluated sensitivity of EBI system and found it could detect 25 nm defects on 88nm L/S pattern which is as small as target defect size for 23 nm Flash HP pattern in 2013 in 2009 ITRS lithography roadmap [2, 3]. EBI system is effective inspection tool even at this moment to detect such small defects on 88nm HP pattern, though there are still some challenges such as the slow throughput and the reliability. Therefore, EBI system can be used as bridge tool to compensate insufficient sensitivity of current inspection tools and improve EUV mask fabrication process to achieve the defect free EUV mask. In this paper, we will present the results of native pattern defects founded on large field 88nm HP pattern using advance EBI system. We will also classify those defects and propose some ideas to mitigate them and realize the defect free EUV mask, demonstrating the capability of EBI as bridge tool.

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A novel defect detection optical system using 199-nm light source for EUVL mask

Cited by 12 publications

References 0 publications

NGL masks: development status and issue

NGL masks: development status and issue

Mask readiness for EUVL pilot line

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

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