A Novel Design Approach for Highly Efficient Multioctave Bandwidth GaN Power Amplifiers

Arnous, Mhd. Tareq; Zhang, Zihui; Barbin, S. E.; Boeck, Georg

doi:10.1109/lmwc.2017.2678436

Cited by 17 publications

(5 citation statements)

References 6 publications

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“…Additionally, the second and the third harmonic load terminations also need to be considered to improve the efficiency by various approaches. However, most of the designs failed to solve the challenge and to realize the optimization in operating multi-bands, e.g., the methods proposed in [11][12][13][14] are focusing on the broadband performance, rather than the bands of interest in our application [15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

Yang

Zhang

et al. 2022

Electronics

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A Class-F mode-based power amplifier (PA) with optimized efficiency in triple-band was designed using a simple and systematic approach. By considering the second and third harmonic terminations of the PA, the relationship between the output impedance design space and the drain efficiency (DE) is extracted by large-signal model simulation. Then, a low-pass matching topology is utilized for the triple-band efficiency optimization. The method is justified by both simulation and measurement of a triple-band PA to integrate three functions into one hardware, i.e., 1518–1525 MHz for mobile communication, 2.1 GHz for telemetry and control, and 2.492 GHz for navigation signal transport. The proposed PA achieves a measured result of high DE (63% at 1.52 GHz, 71% at 2.1 GHz, 59% at 2.492 GHz) in the three bands with an output power of at least 40 dBm.

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Section: Introductionmentioning

confidence: 99%

A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

Yang

Zhang

et al. 2022

Electronics

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“…Two solutions have been proposed by the IEEE802.15.3a. The first proposal is the multiband orthogonal frequency division multiplexing (MBOFDM) UWB and the second represents the direct sequence code division multiple access (DS_CDMA) UWB [16][17][18][19][20][21][22][23][24][25]. The first generation UWB system uses a low-frequency band of 3.5 to 5.1 GHz in its required approach.…”

Section: Introductionmentioning

confidence: 99%

A two-stage power amplifier design for ultra-wideband applications

Al-Kofahi

Albataineh

Dagamseh

2021

IJECE

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In this paper, a two-stage 0.18 μm CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz based on common source inductive degeneration with an auxiliary amplifier is proposed. In this proposal, an auxiliary amplifier is used to place the 2nd harmonic in the core amplified in order to make up for the gain progression phenomena at the main amplifier output node. Simulation results show a power gain of 16 dB with a gain flatness of 0.4 dB and an input 1 dB compression of about -5 dBm from 3 to 5 GHz using a 1.8 V power supply consuming 25 mW. Power added efficiency (PAE) of around 47% at 4 GHz with 50 Ω load impedance was also observed.

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“…0.25 μm GaN HEMT DA exhibits 12.8-13.7 dB gain, 12.3-14.1 dBm P out and 27-34% PAE across 2-6 GHz bandwidth [10]. GaN-HEMT is a popular technology and used in four of the following work: 8-10.4 dB gain, 43-45 dBm P out and 56-70% drain efficiency (DE) is achieved across the 0.5-2.7 GHz band [11]. In [12], 9-14 dB gain, 10-15.5 dBm P out , and 46-75% PAE are achieved across the 0.8-3.6 GHz band.…”

Section: Introductionmentioning

confidence: 99%

Design of a high‐gain silicon BJT and an E‐pHEMT hybrid matrix amplifier with an optimum filter‐matching technique

Sangaran¹,

Kumar²,

Paoloni

2019

IET Microwaves, Antennas & Propagation

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Software Defined Radio (SDR) is an advanced wireless transmission paradigm that permits to support all the consumer wireless protocols such as 2G, 3G, LTE, Wi-Fi (2.4 GHz and 5GHz), Bluetooth and Zigbee, by software rather than hardware. A typical frequency band of operation is in the range 0.5-6 GHz. The challenge to bring a SDR system on portable devices is the availability of Ultra-wide band compact amplifiers with high gain over a wide frequency band. A novel hybrid Silicon BJT and E-pHEMT matrix amplifier with two rows and four columns (2 by 4) of transistors is designed realized and tested demonstrating 0.65-5.8 GHz frequency band to satisfy the SDR specifications. The novel optimum filter matching technique is applied to optimize the performance and overcome the limit of the hybrid approach. The proposed matrix amplifier exhibits an average gain of 37.5dB and average output power of 18dBm across 0.65GHz-5.8GHz band with only 3V supply voltage. The gain is the highest in the state of the art for the frequency range. A bandwidth of 5.15 GHz, 20.3dBm one dB compression point at 1.35GHz, 10% to 16% power added efficiency and 1.2W DC power consumptions are obtained.

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A Novel Design Approach for Highly Efficient Multioctave Bandwidth GaN Power Amplifiers

Cited by 17 publications

References 6 publications

A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

A Class-F Based Power Amplifier with Optimized Efficiency in Triple-Band

A two-stage power amplifier design for ultra-wideband applications

Design of a high‐gain silicon BJT and an E‐pHEMT hybrid matrix amplifier with an optimum filter‐matching technique

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