A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

One step hydrothermal synthesis of a rGO–TiO2 nanocomposite and its application on a Schottky diode: improvement in device performance and transport properties

“…In realm of electronics, graphene has already seen many applications in Schottky devices, a very important part in today's high tech electronics due to its low turn on voltage and high speed switching. 4 It is seen that several factors like short carrier lifetime, high recombination rate, quality of the interface, band gap of the material have profound impact on the performance of a Schottky barrier diode (SBD). 5,6 Also, there have been other issues like cost and toxicity of materials.…”

Nanostructured device based on coated ZnO layer as a window in solar cell applications

“…The I-V characteristics of the Al/n-ZnO/p-Si/Al device are described by thermionic emission model as follows [72,73]:…”

“…Derivative of voltage over derivative of lnI yields the ideality factor n of device (n = 1 for ideal diode case) as follows [72]:…”

“…where I and V are the measured current and applied bias voltage, I 0 is the saturation current expressed as [72]:…”

“…where A * is Richardson constant (32 A/K 2 ·cm 2 for p-type Si) [72], A is effective device area T is the ambient temperature in Kelvin, q is electron charge, Φ b is zero-bias barrier height of our device expressed as follows [73]:…”