A Novel Digital Etch Technique for Deeply Scaled III-V MOSFETs

Lin, Jianqiang; Zhao, Xin; Antoniadis, D.A.; Alamo, Jesús A. del

doi:10.1109/led.2014.2305668

Cited by 58 publications

(33 citation statements)

References 11 publications

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“…They used a low-power O 2 plasma oxidation followed by a diluted H 2 SO 4 treatment which can etch a combination of InP, InGaAs, and InAlAs in a precise and nonselective manner. 13 An etch rate of 0.9 nm/cycle was achieved.…”

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confidence: 98%

Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)

Dorp

Arnauts

Holsteyns

et al. 2015

ECS J. Solid State Sci. Technol.

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An approach for wet-chemical atomic layer etching (WALE) of semiconductors is described. The surface chemistry of InAs was investigated for HCl/H 2 O 2 solutions suitable for controlled etching in the low etch rate range (<0.1-10 nm min −1 ). Kinetic studies were performed using inductively coupled plasma -mass spectrometry (ICP-MS). As for GaAs and InGaAs, the importance of the Cl − ion for the etching kinetics is demonstrated and a chemical reaction scheme is presented to help understand the surface chemistry. A detailed study of an alternative two-step etching process was performed. A quantitative ICP-MS analysis of the oxide formed in O 3 /H 2 O solution and the dissolution in HCl was performed suggesting that the removal of oxidized In products is the slow step in the dissolution reaction. The reoxidation of oxide-free InAs (100) surfaces in air is discussed. The etch rate range and the surface morphology control after etching show that the investigated wet-chemical approach for atomic-layer etching is a valid candidate for advanced CMOS processing.

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confidence: 98%

Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)

Dorp

Arnauts

Holsteyns

et al. 2015

ECS J. Solid State Sci. Technol.

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“…In this study, the digital etch process was performed using low power O 2 plasma (100 watts) in an Asher system and wet etching at room temperature using a solution of H 2 SO 4 :H 2 O = 1:1 for 30 s [19]. TEM lamella, used for High Resolution Transmission Electron Microscopy and Energy Electron Loss Spectroscopy (HRTEM & EELS) investigations, were then prepared using a dual beam system consisting of Focused Ion Beam and Scanning Electron Microscopy (FIB/SEM) Helios Nano Lab FEI™, using the standard method [20].…”

Section: Methodsmentioning

confidence: 99%

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

2017

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To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM) investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS) showed that the amount of oxides (In x O y , Ga x O y or As x O y ) was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

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“…In this work, we focus on ''digital etch'' technique conducted on InGaAs surfaces with Molybdenum as metal contact. In the first place, this technique was developed to precisely etch the multiple capping layers in a recessed-gate III-V FET heterostructure [15]. Here, the ''digital etch'' is mainly used to improve the interface between the metal and InGaAs layer.…”

Section: Introductionmentioning

confidence: 99%