A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

Abstract

An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S-parameters in the frequency range of 1-12 GHz under extracted-bias conditions. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance. The method yields a deviation of less then 5% between the measured and modeled S-parameters.