2003
DOI: 10.1117/12.532866
|View full text |Cite
|
Sign up to set email alerts
|

A novel electron-beam-based photomask repair tool

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
16
0

Year Published

2005
2005
2024
2024

Publication Types

Select...
6
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 18 publications
(16 citation statements)
references
References 6 publications
0
16
0
Order By: Relevance
“…An effect similar to that in e-beam lithography, here called the "BSE proximity effect," was reported by, for instance, Lau et al, 8 Boero et al, 31 and Edinger et al 26 Extra deposition can be observed as a halo around the base of tips ͓Fig. 33͑a͔͒ or around lines ͓Fig.…”
Section: Deposit Locationmentioning
confidence: 63%
See 1 more Smart Citation
“…An effect similar to that in e-beam lithography, here called the "BSE proximity effect," was reported by, for instance, Lau et al, 8 Boero et al, 31 and Edinger et al 26 Extra deposition can be observed as a halo around the base of tips ͓Fig. 33͑a͔͒ or around lines ͓Fig.…”
Section: Deposit Locationmentioning
confidence: 63%
“…Examples are probes ͑functionalized tips for scanning probe microscopy or for local conductivity measurements͒, [6][7][8][9][10][11][12][13][14] conducting or nonconducting joining technique, [15][16][17][18][19][20] conducting wires, [21][22][23][24] mask repair, [25][26][27] electron sources, [28][29][30] micro-Hall and micro superconducting quantum interference devices, 31,32 nanotweezers and gripping devices, 33,34 nano-optic patterns or photonic crystals, 35,36 entire miniature electron optical systems, 37 diodes, 38 and seeds for nanotube growth. 39 Despite its long history, detailed knowledge of the process is still very much dispersed.…”
Section: Introductionmentioning
confidence: 99%
“…7 One of the challenges in EBID are the so-called proximity effects, i.e., the scattering and the secondary emission of electrons, which lead to an effective broadening of the deposits compared to the diameter of the primary beam. 4 The BSE proximity effect [7][8][9][10] is caused by BSEs and the thereby induced SEs, while the forward scattered electron (FSE) proximity effect [11][12][13] originates from scattering within an already produced deposit; both effects can cause deposition of material away from the PE impact area. In EBID, there is always a superposition of FSE and BSE proximity effects, i.e., these proximity effects cannot be studied separately.…”
mentioning
confidence: 99%
“…FEB gas assisted etching is mainly pushed for photomask repair at the 65 nm node and below 39 . The main reasons are the resolution and low damage achievable with electrons as well as that no implantation of ions takes places.…”
Section: Focused Electron Beam Induced Etchingmentioning
confidence: 99%