A Novel EPROM Device Using Focused Boron Ion Beam Implantation

Abstract

A novel FAIvIOS type EPROM device is demonstrated, which has a heavily focused ion beam implanted region at the drain edge of the channel reSlion. This heavily doped region permits higher electric field near the drain edge, resulting: in remarkable increase of hot-carrier g:eneration tate, which reduces both the progranming voltage and programmin8i time. Three dimensional device simulator, CADDETIL predicted the device characteristics fairly wel1. programming time of a fabricated device with effective channel width of 3.1 !rm is 5oms, which is 1,250 of that of a conventional device' B-7-5