A novel extraction procedure to determine the noise parameters of on-wafer devices

Abstract

A new procedure for the extraction of noise parameters of on-wafer devices is presented and validated experimentally for the first time. The procedure is based on the noise figure measurement of similar devices of different size and biased at constant drain current density J ds and constant drain voltage V ds . Key to its implementation is a scalable noise model. The model in use is the Pospieszalski noise model, based on the equivalent noise temperatures Tgs and T ds of the gate-source and the drain-source resistance, respectively. The new procedure also outlines a path towards the experimental validation of all the noise temperatures associated with the device's lossy elements.

A novel theoretical analysis for the determination of the noise parameters applicable to millimeter‐wave frequencies (invited)

“…The new theory has recently been applied to the determination of the equivalent noise temperatures T gs and T ds of a set of GaN FETs [18,19]. The determination of the small-signal model at constant current density J ds D I ds =P and drain-source voltage V ds is a key step in the evaluation of (17) for multiple reasons:…”

“…This may be tricky particularly in the b r gs case as discussed in [10] and clearly identifiable in (15). Figure 3 is based on the data discussed in [19] and presents results versus frequency and versus device periphery at 13 GHz. The X-axis is similar for plots in the same column.…”

“…It ought to be pointed out that (15) implicitly assumes that the noise temperatures T gs and T ds are independent of the transistor size. Although it is a reasonable assumption to make which has been verified experimentally [19,26,27], it is indeed a requirement that was not present in the original Pospieszalski model. As mentioned in Section 4, (17) depends on both source impedance Z S and total periphery P .…”

“…Its application to the noise characterization of active devices has generally been used to simplify standard measurement procedures by optimizing the equivalent noise temperatures against noise figure measurements [16,17]. A direct analytical connection between measurement and equivalent noise temperature noise model [18,19] will be presented in this paper. The reader will be taken through the details of the theory, from a review of the basic assumptions to the analytical connection between noise figure and model parameters.…”

“…A direct analytical connection between measurement and equivalent noise temperature noise model will be presented in this paper. The reader will be taken through the details of the theory, from a review of the basic assumptions to the analytical connection between noise figure and model parameters.…”