A Novel Fabrication of Cu-Mn Alloy Films by Chemical Displacement Process

Abstract

The Cu-Mn alloy films have been successfully fabricated by a novel chemical displacement process. The surface morphologies and displacement rate of Cu-Mn with pH values and temperatures are investigated in this paper. Furthermore, this chemical displacement is a selective deposition between Si and SiO 2 , this predominance can apply to self-formed metal layer. The chemical displacement process provides a solution to satisfy for 32 nm node Cu-Mn alloy self-formed barrier requirement.