2012
DOI: 10.2528/pierl11120607
|View full text |Cite
|
Sign up to set email alerts
|

A Novel Four Layer Metallization for Microwave Integrated Circuits

Abstract: Abstract-In order to overcome the problems facing Cr-Cu-Au metallization, such as discoloration, diffusion of Cu into Au, a four-layer metallization Cr-Cu-NiP-Au is demonstrated on alumina substrate for microwave integrated circuit (MICs). A amorphous and nonmagnetic NiP barrier layer is used to avoid the diffusion of Cu into Au through the grain boundaries, which are the low activation energy path for diffusion at moderate temperature.In this view, properties of Cr-Cu-NiP-Au metallization, such as sheet resis… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 4 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?