A novel GaAs power MESFET with low distortion characteristics employing semi-insulating setback layer under the gate

Furukawa, H.; Tateoka, K.; Miyatsuji, K.; Sugimura, Akira; Ueda, Daisuke

doi:10.1109/16.481717

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…It has been theorized that distortions of GaAs power devices were caused by trapping states at the GaAs surface [3,4]. From the research, it was found that FETs exhibiting smaller frequency dispersion of I DSS showed smaller intermodulation distortion.…”

Section: Device Measurement Resultsmentioning

confidence: 99%

“…Two key research requirements for GaAs power MESFETs are the improvement of both the distortion performance and the breakdown voltage. The conventional MESFET suffers from poor distortion and breakdown performance caused by electron trapping at the surface of devices [1][2][3][4]. Passivation of the GaAs surface continues to be one of the most difficult problems [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Surface oxygen implantation for GaAs MESFETs passivation

Hsueh¹,

Hsu²,

Wu³

et al. 2004

Semicond. Sci. Technol.

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Ion-implanted GaAs MESFETs with and without extra oxygen implantation have been fabricated, studied and compared. The extra oxygen implantation was employed after the channel implantation to form a high-resistance layer near the surface of GaAs MESFETs and to replace the passivation process. Two different oxygen implantation and annealing conditions were used to study the effect of implanted oxygen on device performance. The device with oxygen implantation and annealing at the same time as channel implantation demonstrated improved transconductance and breakdown characteristics, less frequency dispersion of drain current and good time dependence of drain current at 150 • C in air without sacrificing rf performance.

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Section: Device Measurement Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface oxygen implantation for GaAs MESFETs passivation

Hsueh¹,

Hsu²,

Wu³

et al. 2004

Semicond. Sci. Technol.

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“…An analog/digital dual-mode power module with ion-implanted GaAs power MESFETs showed a power-added efficiency (PAE) of 56% at 3.7 V for the North American digital cellular (NADC) communications [26]. A 36-mm GaAs power MESFET using selective ion implantation and semi-insulating setback layer technologies delivered a P out of 31.5 dBm at 5.8 V for digital communication applications [27]. Most ion-implanted GaAs power MESFETs have been implemented by means of selective ion implantation technology [24 -27].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications

Zheng

Chiang

Lai

et al. 2016

TOMSJ

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GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si 3 N 4 passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (P out ) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited a P out of 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximum P out of 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited a P 1dB of 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with a P out of 28 dBm demonstrated an adjacent channel power rejection (ACPR) of -31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and -45.7 dBc at +2.25 MHz.

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