A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Abstract

An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

“…AlGaN/GaN HEMT, one of the representative structured transistors in the third-generation semiconductor technology, provides many advantageous properties over silicon technology, such as a large critical electric field, high electron mobility, high saturation current, and an excellent temperature capability [1][2][3][4], due to its wide band gap and twodimension electron gas (2DEG) density. Such outstanding performance makes the HEMT device a highly anticipated candidate in future high-power and high-frequency applications [5][6][7][8].…”

Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering

“…Compared to the GaN-on-SiC approach, the GaN-on-Si approach offers a large area and cost-effective advantages. In recent years, AlGaN/GaN HEMTs on silicon have gained attentions for RF applications, 5 especially at frequencies below 6.0 GHz. [6][7][8][9] Besides, the GaN-on-Si offers the advantages of possible integration of silicon-based devices on large Si wafers.…”