A Novel GaN-Hemt based Inverter and Cascode Amplifier

Paul, Saili; Sarkar, Angsuman

doi:10.1109/edkcon.2018.8770510

Search citation statements

Order By: Relevance

Paper Sections

Select...

Selection Of Transistor and Configuration1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

2022

Publication Types

Select...

Article1

Book1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The HEMT are classified based on its growing technology as pHEMT (pseudomorphic HEMT) [6] and mHEMT (metamorphic HEMT). In this paper the LNA is designed with pHEMT transistor [7].…”

Section: Selection Of Transistor and Configurationmentioning

confidence: 99%

Design of Low Noise Amplifier for WLAN using pHEMT

Thirunavukkarasu¹,

Murugesan²

2020

IJET

View full text Add to dashboard Cite

The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.

show abstract

“…The HEMT are classified based on its growing technology as pHEMT (pseudomorphic HEMT) [6] and mHEMT (metamorphic HEMT). In this paper the LNA is designed with pHEMT transistor [7].…”

Section: Selection Of Transistor and Configurationmentioning

confidence: 99%