A novel gate structure in large diagonal size printable CNT-FED

Wang, Qilong; Lei, Wei; Zhang, Xiaobing; Wang, Baoping; Liu, Min; Zhou, Xuedong; Di, Yunsong; Ma, Xiaoyan

doi:10.1016/j.apsusc.2004.06.025

Cited by 16 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…28 Mainly physical vapor deposition (PVD) methods have been applied for fabricating MgF 2 thin films, e.g. thermal evaporation, [27][28][29][30][31][32][33][34][35] electron beam evaporation (EBE), 4,12,21,[36][37][38] molecular beam deposition (MBD), 33 ion beam sputtering (IBS), 31,37,39 RF-magnetron sputtering, 40 ion beam assisted deposition (IBAD), 41 and plasma ion assisted deposition (PIAD). 18,38,42 The main limitation of evaporated MgF 2 films has been that they are porous with low packing densities.…”

Section: Introductionmentioning

confidence: 99%

Study of a novel ALD process for depositing MgF2 thin films

et al. 2007

View full text Add to dashboard Cite

Magnesium fluoride is an ultraviolet (UV) transparent material which is widely used in optical applications over a wide wavelength range. We have developed a novel atomic layer deposition (ALD) process for depositing magnesium fluoride thin films for the first time. MgF2 films were grown at 250-400 degrees C using Mg( thd)(2) and TiF4 as precursors. The crystallinity, morphology, composition, thicknesses and refractive indices of the films were analyzed by X-ray diffraction/ reflection ( XRD/XRR), transmission electron microscopy ( TEM), atomic force microscopy ( AFM), field emission scanning electron microscopy ( FESEM), time-of-flight elastic recoil detection analysis ( TOF-ERDA), and UV-vis spectrophotometry. Electrical properties were also measured. The growth rate was temperature dependent decreasing from 1.6 A cycle 21 at 250 degrees C to 0.7 angstrom cycle(-1) at 400 degrees C. The films were polycrystalline at 250 - 400 degrees C. The refractive indices were between 1.34 - 1.42 and the permittivity 4.9. The impurity levels were below 0.6 at.% in the films deposited at 350 - 400 degrees C

show abstract