A novel graphene nanoribbon field effect transistor with two different gate insulators

A Guideline for Achieving the Best Electrical Performance with Strategy of Halo in Graphene Nanoribbon Field Effect Transistor

“…This key parameter is calculated to characterize the limitations on AC operation and switching speed of the transistors. The delay time shows the device ability to switch between on and off states and it is computed as follow: 15 τ s = C G V on I on [20] The bias conditions are the values V G = V DS = 0.5 V. It is worth noting that I on is the ON-state current. Fig.…”

“…13,14 Graphene nanoribbon field effect transistors (GNRFETs) suffer from the high leakage current due to the electron band-to-band tunneling (BTBT). 15 To alleviate this event, a useful technique as the engineering of the doping concentration in the channel near the source/drain junctions is proposed. Single and double halo structures have been introduced to adjust the threshold voltage and to improve the device short channel effects (SCEs).…”

Multiwavelength Raman spectroscopy of ultranarrow nanoribbons made by solution-mediated bottom-up approach

“…In the realm of graphene-derived systems, bottom-up approaches based on both solution-phase synthesis and surface-assisted growth have been exploited to produce structurally well-defined one-dimensional nanostructures, namely graphene nanoribbons (GNRs) [2][3][4][5][6][7][8]. These are basically narrow strips of graphene where the outstanding properties of graphene are combined to the presence of a finite bandgap, which is derived from quantum confinement effects and makes them suitable for graphene-based electronics and opto-electronics applications [9,10]. Besides the capability of producing ultra-narrow (width 10 nm) and finite-gap nanoribbons with atomistic precision, solution-phase synthesis also allows for a fine tuning of their properties, that are in fact found to be highly dependent on edge morphology and functionalization [4,7,8,[11][12][13][14][15].…”

Suppression of localized transmission peaks and deviation from Matthiessen's rule in disordered armchair graphene nano-ribbons due to acoustic phonons

“…These localized states can strongly affect the performance of graphene based devices especially in the off-states and cause high leakage [23] [24]. To overcome this problem devices with new structures have been proposed [25] [26]. It seems that incoherent scattering mechanisms such as those created by electron-phonon interactions can suppress localization of electrons [1].…”