A novel HBT distributed amplifier design topology based on attenuation compensation techniques

Kobayashi, K.W.; Esfandiari, R.; Oki, A.K.

doi:10.1109/mcs.1994.332109

Cited by 29 publications

(8 citation statements)

References 7 publications

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“…In this work we demonstrate a practical implementation and measurements of a distributed amplifier with cells comprising a common collector (CC) input stage followed by a cascode gain stage, in a topology similar to that proposed by Kobayashi etal in [7]. The common collector transforms the input capacitance of the cascode (C π ) to a negative impedance at the input, reducing the input losses of the ATL.…”

Section: Introductionmentioning

confidence: 99%

Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth

Giannakopoulos

Eriksson

Darwazeh

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its onchip measurements are reported. The multi-cell distributed amplifier uses four gain cells where each consists of a common collector input stage followed by a cascode gain stage. The chip includes bias, decoupling and terminating circuits for the dc and RF interconnects; it measures 0.72 mm by 0.4 mm. It consumes 210 mW of power and can deliver up to 5.5 dBm of output power at 195 GHz. The amplifier achieves an average gain of 13.5 dB with an overall bandwidth over 200 GHz and a ± 2 dB gain ripple. The measurements indicate that this is the widest band dc-coupled amplifier reported to date and has the highest bandwidth reported among non-cascaded distributed amplifiers.

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Section: Introductionmentioning

confidence: 99%

Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth

Giannakopoulos

Eriksson

Darwazeh

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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“…Another technique developed to reduce the loading effect of the transistors input impedance is using a common-source amplifier with RC degeneration [Fig. 5(b)] as the gain stage [25]- [31]. The input impedance of the amplifier is derived as a series resistance and capacitance.…”

Section: A Da Using Improved Gain Stagesmentioning

confidence: 99%

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

2018

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I. INTRODUCTION B ROADBAND amplification of signals is desirable in many applications such as high-speed data communications, high-resolution imaging systems, optoelectronics and instrumentation systems. Wide bandwidth is one of the prominent factors to be considered in designing such a system since it determines ability of the system for transferring highdata-rate information, transmitting/receiving short pulses, or processing wideband signals. Designing broadband amplifiers has always been challenging. The ever-increasing demand for higher data-rates and low energy consumption in next generation communication systems further complicates the design of broadband amplifiers. Distributed amplifiers (DA), also known as travelling-wave amplifiers (TWA), are one of the most popular broadband amplifier architectures. The DA architecture was originally patented by Percival in 1936 [1] and later elaborated by Ginzton in 1948 [2]. The early DAs were implemented using vacuum tube technology. One of the first vacuum tube DAs fabricated in 1950 is shown in Fig. 1. The amplifier included three type 807 tubes and 482-Ω plate and grid lines. The amplifier achieved a gain of 11 dB, bandwidth of 100 Hz to 300 MHz, and a typical output power of 15 W [3]. The first Monolithic Microwave Integrated Circuit (MMIC) DA was demonstrated by Ayasli in 1982 [4] using a Gallium Arsenide (GaAs) MESFET technology. The amplifier, shown in Fig. 2, included four transistors with 1-µm gate length and 50-Ω input and output lines. It achieved 9-dB gain and 1-13 GHz bandwidth. GaAs remained the main technology for design of DAs until the inception of the first Indium Phosphide (InP) DA in 1990 [5] with an impressive bandwidth of 5-100 GHz. GaAs and InP semiconductor technologies have been predominantly employed in implementation of DAs. These technologies provide superior performance resulting from their high electron mobility, high saturated electron velocity, high breakdown voltage, and high-resistivity substrate. The later contributes to availability of low-loss integrated passive elements. The market demands for low cost, small size, and low power consumption of electronic systems has motivated researchers to develop techniques to implement distributed amplifiers using mainstream CMOS technologies. The first integrated CMOS DA was presented by Kleveland in 1999 [6]. Recently,

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“…The alternative design approach explained in this paper is based on the attenuation compensation technique [8], namely, a common collector stage followed by a cascode transistor pair. Fig.…”

Section: Design Of the Gainp/gaas Distributed Amplifiermentioning

confidence: 99%

“…The fabricated circuit has a common-collector cascode active cell designed using attenuation compensation technique [8]. Although, the design does not employ an active load at the input and output transmission lines [2], [9], its low-frequency 0018-9480/00$10.00 © 2000 IEEE Fig.…”

Section: Introductionmentioning

confidence: 99%

Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication

Mohammadi

Park

Pavlidis

et al. 2000

IEEE Trans. Microwave Theory Techn.

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The design methodology, processing technology, and characterization of high-gain GaInP/GaAs heterojunctoin-bipolar-transistor-based distributed amplifiers are described in this paper. Distributed amplifiers with different active cells and number of stages have been compared for high-gain (>12 dB) and high-bandwidth (>25 GHz) performance. Based on the results, a three-stage attenuation-compensated distributed amplifier with a flat gain (S 21) of 12.7 dB over a bandwidth of 27.5 GHz was successfully fabricated and tested. Eye-diagram tests at 10 Gb/s show very open eye characteristics with no signal skewing. The amplifier achieves a minimum noise figure of 4 dB at 3 GHz and a sensitivity of 025 dBm for 10-Gb/s nonreturn-to-zero 2 15 0 1 pseudorandom bit sequence with a bit error rate of 10 09 .

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A novel HBT distributed amplifier design topology based on attenuation compensation techniques

Cited by 29 publications

References 7 publications

Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth

Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication

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