A Novel High-Power Amplifier Using a Generalized Coupled-Line Transformer With Inherent Dc-Block Function

Wu, Yongle; Liu, Yuanan; Li, Shun; Li, Shulan

doi:10.2528/pier11050409

Cited by 17 publications

(20 citation statements)

References 16 publications

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“…As shown in Figure 1, this matching network configuration is fundamentally based on extending the single-band coupled-line transformer, which is an arbitrary complex impedance transformer from [23], to dual-band application.…”

Section: Design Methodologymentioning

confidence: 99%

Miniaturized Dual-Band Matching Technique Based on Coupled-Line Transformer for Dual-Band Power Amplifiers Design

Li¹,

Tang²,

Liu³

et al. 2012

PIER

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Abstract-This study presents a novel miniaturized dual-band coupled-line impedance transformer.This dual-band matching technique uses the characteristics of coupled-line and dual-band stubs to realize matching arbitrary complex impedance to arbitrary complex impedance at two arbitrary uncorrelated frequencies. Especially, it satisfies the demand of dual-band matching at two relatively closed operating frequencies (n = f 2 /f 1 ≤ 1.2), and occupy a very small circuit area with inherent DC-Block function. The proposed synthesis approach is validated by the design and fabrication of a 30 W gallium nitride (GaN)-based class-AB power amplifier (PA) for GSM and WCDMA at 1800 MHz and 2140 MHz. The PA's output matching network based on the proposed structure can accurately match 50 Ω to the ideal load impedances of the transistor at two designed frequency simultaneously and has 20% and 15% bandwidth for which the reflection coefficient magnitudes are less than 0.1, respectively.

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Section: Design Methodologymentioning

confidence: 99%

Miniaturized Dual-Band Matching Technique Based on Coupled-Line Transformer for Dual-Band Power Amplifiers Design

Li¹,

Tang²,

Liu³

et al. 2012

PIER

Self Cite

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show abstract

“…For a bandstop filter, the desired parameters should be constrained by S 21 = 0, at f 0 S 11 = 0, other frequencies (11) where f 0 is the center frequency of bandstop filter. From the Equation (10), it can be observed that the condition Z 21 = 0 can be obtained when S 21 = 0 is required.…”

Section: Circuit Structure and Design Theorymentioning

confidence: 99%

“…Usually, the distributed elements including transmission-line, coupled-line sections and lumped elements are used in the design of bandstop filters. Among them, coupled-line sections, which are applied in bandpass filters [10] and impedance transformers [11], have several advantages such as compact size and flexible circuit parameters. Also, based on two meandered parallel-coupled lines, compact bandstop filters have been reported in [12,13], but this structure is not an in-line form.…”

Section: Introductionmentioning

confidence: 99%

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Novel in-Line Microstrip Coupled-Line Bandstop Filter With Sharp Skirt Selectivity

Liu¹,

Wu²

2013

PIER

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Abstract-This paper presents a novel design approach to design inline microstrip bandstop filter with accurate design theory and sharp skirt selectivity. This kind of bandstop filter is based on a simple coupled-line structure, indicating compact and flexible circuit layout for microstrip implementation. For a single-section bandstop filter, the scattering parameters and their constrain conditions are achieved, which provides an effective design guide for multi-section bandstop filters. Theoretical analysis indicates that the even-mode and oddmode characteristic impedances can be easily used to determine the desired bandstop performance while the total circuit layout keeps very compact. For demonstration, seven numerical examples are designed, calculated, and compared. Finally, both experimental and simulation results of a two-section two-cell microstrip bandstop filter operating at 1 GHz are presented to verify the theoretical predications.

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“…In [22,23] is shown the narrow frequency UHF band that demonstrated high efficiency employing switched gain stage and class E approaches, respectively with 7.2 V. Other recent works related to high performance power amplifier are reported in [24,25] with GaAs HBT and CMOS technology, respectively. In the other hands, power amplifier design with parallel-coupled transformer matching is demonstrated in [26,27].…”

Section: S-parametermentioning

confidence: 99%

Dual Fed Distributed Amplifier With Controlled Termination Adjustment

Kumar¹,

Limiti²,

Paoloni³

2013

PIER

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Abstract-A new circuit and technique to extend the bandwidth of the Dual Fed Distributed Amplifier (DFDA) while preserving the improvement on efficiency performance in comparison to conventional distributed amplifiers (DAs) is presented. The theoretical analysis is described in detail, and a test vehicle is realized to demonstrate the effectiveness of the proposed method. Output power of ∼ 29 dBm, gain of 10 dB, covering a bandwidth from 100 to 800 MHz, with a PAE of 20-45% is experimentally demonstrated. The results are compared with measured results of the conventional DA, demonstrating a significant improvement in bandwidth and efficiency.

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A Novel High-Power Amplifier Using a Generalized Coupled-Line Transformer With Inherent Dc-Block Function

Cited by 17 publications

References 16 publications

Miniaturized Dual-Band Matching Technique Based on Coupled-Line Transformer for Dual-Band Power Amplifiers Design

Miniaturized Dual-Band Matching Technique Based on Coupled-Line Transformer for Dual-Band Power Amplifiers Design

Novel in-Line Microstrip Coupled-Line Bandstop Filter With Sharp Skirt Selectivity

Dual Fed Distributed Amplifier With Controlled Termination Adjustment

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