A Novel High-Precision Digital Tunneling Magnetic Resistance-Type Sensor for the Nanosatellites’ Space Application

Li, Xiangyu; Hu, Jianping; Chen, Weiping; Yin, Liang; Liu, Xiaowei

doi:10.3390/mi9030121

Cited by 23 publications

(10 citation statements)

References 37 publications

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“…In the chopping technique, chopper switches are designed for the output of MR sensors [330]. The noise characteristics of the chopper switches are dependent on charge leakage, parasitic capacitance, IC substrate coupling noise, voltage stability of the drive signal, and the external electric field sensitive electrodes [331]. All these factors need to be considered and optimized in order to suppress the noise.…”

Section: B Detectivitymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. A MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of The IEEE Magnetics Society with the aim to provide an R&D guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from 10 countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording

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Section: B Detectivitymentioning

confidence: 99%

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

et al. 2019

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“…Harmonic distortion and noise are the key parameters which determine the performance of TMR sensors. The tunneling magneto-resistance micro-magnetometers can achieve a high-precision output (less than 1 nT/Hz 1/2 ) by input-stage chopping and ripple suppression loop [6,7]. We proposed some optimization methods of harmonic distortion for high-precision miniaturized three-channel TMR sensors interface circuit.…”

Section: Of 16mentioning

confidence: 99%

Harmonic Distortion Optimization for Sigma-Delta Modulators Interface Circuit of TMR Sensors

Liu

2020

Sensors

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The tunneling magnetoresistance micro-sensors (TMR) developed by magnetic multilayer material has many advantages, such as high sensitivity, high frequency response, and good reliability. It is widely used in military and civil fields. This work presents a high-performance interface circuit for TMR sensors. Because of the nonlinearity of signal conversion between sensitive structure and interface circuit in feedback loop and forward path, large harmonic distortion occurs in output signal spectrum, which greatly leads to the reduction of SNDR (signal noise distortion rate). In this paper, we analyzed the main source of harmonic distortion in closed-loop detection circuit and establish an accurate harmonic distortion model in TMR micro-sensors system. Some factors are considered, including non-linear gain of operational amplifier unit, effective gain bandwidth, conversion speed, nonlinearity of analog transmission gate, and nonlinearity of polycrystalline capacitance in high-order sigma-delta system. We optimized the CMOS switch and first-stage integrator in the switched-capacitor circuit. The harmonic distortion parameter is optimally designed in the TMR sensors system, aiming at the mismatch of misalignment of front-end system, non-linearity of quantizer, non-linearity of capacitor, and non-linearity of analog switch. The digital output is attained by the interface circuit based on a low-noise front-end interface circuit and a third-order sigma-delta modulator. The digital interface circuit is implemented by 0.35μm CMOS (complementary metal oxide semiconductor) technology. The high-performance digital TMR sensors system is implemented by double chip integration and the active interface circuit area is about 3.2 × 2 mm. The TMR sensors system consumes 20 mW at a single 5 V supply voltage. The TMR sensors system can achieve a linearity of 0.3% at full scale range (±105 nT) and a resolution of 0.25 nT/Hz1/2(@1Hz).

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“…The MMS array was applied in bio-detection assays. A three-axis MEMS MMS, fabricated by Li [4], was a digital tunneling magnetoresistance type. The MMS with a CMOS interface circuit has been used in the field of nanosatellites.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Chen

Tsai

Shih

et al. 2020

Sensors

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The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

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A Novel High-Precision Digital Tunneling Magnetic Resistance-Type Sensor for the Nanosatellites’ Space Application

Cited by 23 publications

References 37 publications

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

Magnetoresistive Sensor Development Roadmap (Non-Recording Applications)

Harmonic Distortion Optimization for Sigma-Delta Modulators Interface Circuit of TMR Sensors

Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

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