A novel high speed lateral IGBT with a self-driven second gate

Hao, Hu; Chen, Xingbi

doi:10.1088/1674-4926/33/3/034004

Cited by 2 publications

(1 citation statement)

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“…They all realize the reverse-conducting (RC) function but still have some defects. More specifically, SA-LIGBT suffers from the snapback problem, which impacts the devices when they are connected in parallel or working at low-temperature [14,15,16,17]. SSA-LIGBT reduces the snapback but consumes more chip area.…”

Section: Introductionmentioning

confidence: 99%

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor

Lin

Cheng

et al. 2019

IEICE Electron. Express

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A novel reverse-conducting (RC) silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed. It features a built-in thyristor formed by introducing a floating P-well surrounding an N + collector. The realization of the thyristor barely increases chip area or complicates fabrication. It helps to realize the RC function and prevents the device from working in the unipolar mode, which eliminates the snapback problem. Moreover, since the thyristor provides an electron extraction path during the turn-off operation, the switching performance is improved. Simulation results show that, compared with the conventional LIGBT with an antiparallel diode, the proposed device presents the reverse recovery charge (Qrr) and the turnoff loss (Eoff) reduced by more than 30%, and the RC voltage drop (VF) decreased by about 0.1 V. key words: lateral insulated gate bipolar transistor (LIGBT), reverseconducting (RC), snapback-free Classification: Power devices and circuits This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.

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Section: Introductionmentioning

confidence: 99%