A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

Choi, Sunkyu; Jeong, Yongrok; Lee, Jongwon; Yang, Kyounghoon

doi:10.1109/tnano.2009.2013462

Cited by 25 publications

(2 citation statements)

References 19 publications

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“…Electronic devices with NDR are widely used in electronic and radio engineering systems of the broadest use, not only as of the main elements of amplifying [1], oscillating [2,3], multiplexing [4], static-random-access-memory (SRAM) [5], and switching circuits [6]. Recently, very promising is the use of NDR devices in radar [7], communication [8] and info-communication [9] circuits, analog-to-digital converters [10], and neural network circuits [11] due to the significant simplification of many circuitry solutions.…”

Section: Introductionmentioning

confidence: 99%

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Ulansky

Raza

Milke³

2021

Applied Sciences

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Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage. Semiconductor structures with NDR have several unique properties that stimulate the search for technological and circuitry solutions in developing new semiconductor devices and circuits experiencing NDR features. This study considers two-terminal NDR electronic circuits based on multiple-output current mirrors, such as cascode, Wilson, and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed electronic circuits are the linearity of the current-voltage characteristics in the NDR region and the ability to regulate the value of negative resistance by changing the number of mirrored current sources. We derive equations for each proposed circuit to calculate the NDR region’s total current and differential resistance. We consider applications of NDR circuits for designing microwave single frequency oscillators and voltage-controlled oscillators. The problem of choosing the optimal oscillator topology is examined. We show that the designed oscillators based on NDR circuits with Wilson and improved Wilson multiple-output current mirrors have high efficiency and extremely low phase noise. For a single frequency oscillator consuming 33.9 mW, the phase noise is −154.6 dBc/Hz at a 100 kHz offset from a 1.310 GHz carrier. The resulting figure of merit is −221.6 dBc/Hz. The implemented oscillator prototype confirms the theoretical achievements.

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Section: Introductionmentioning

confidence: 99%

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Ulansky

Raza

Milke³

2021

Applied Sciences

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“…So far, different logic circuit families based on the RTD/HEMT monolithic integration concept have been proposed, such as compact memory, multivalued logic, oscillators, shift registers and frequency multiplication [6][7][8][9][10][11] .…”

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confidence: 99%

InP-based RTD/HEMT monolithic integration

Guo

Li³

et al. 2010

Trans. Tianjin Univ.

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： Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT material structure is epitaxied on InP substrate through molecular beam epitaxy. Based on wet chemical etching, metal lift-off and air bridge interconnection technology, RTD and HEMT are fabricated simultaneously. The peak-to-valley current ratio of RTD is 7.7 and the peak voltage is 0.33 V at room temperature. The pinch-off voltage is -0.5 V and the current gain cut-frequency is 30 GHz for a 1.0 µm gate length depletion mode HEMT. The two devices are conformable in current magnitude, which is suitable for the construction of various RTD/HEMT monolithic integration logic circuits.The resonant tunneling diode (RTD) is an ultrahigh speed and ultra-high frequency quantum-transport device with negative differential resistance (NDR) I-V characteristic originating from resonant tunneling effect. RTD is a promising candidate in high-speed integrated circuits since it has been shown to operate at frequencies up to 712 GHz [1] , and also exhibits the fastest switching time (1.5 ps) [2] among semiconductor devices, which is due to its high-peak current density and relatively small capacitance. Moreover, RTD can be vertically integrated to obtain a device with multiple negative differential resistance regions, and can greatly reduce circuit complexity [3][4][5] . These distinct advantages are the driving force for the research of quantum functional devices and circuits using RTDs.Monolithic integration of RTDs and other advanced and well-matured conventional transistors, for example, high electron mobility transistors (HEMTs) or heterojunction bipolar transistors (HBTs), is a practical way to construct ultrahigh-speed circuits. In this mode, RTDs are responsible for the switching function. This mode provides several advantages. Firstly, it allows separate optimization of RTDs and conventional transistors, which is advantageous to reproducibility and uniformity.Secondly, RTDs are used in the core of a circuit, which leads to significant performance enhancement and devices number decrease of various circuits. So far, different logic circuit families based on the RTD/HEMT monolithic integration concept have been proposed, such as compact memory, multivalued logic, oscillators, shift registers and frequency multiplication [6][7][8][9][10][11] .In this paper, a kind of monolithic integration technology of RTD/HEMT based on InP substrate is reported. The RTD/HEMT material structure is epitaxied using molecular beam epitaxy (MBE) technology. RTDs and HEMTs with better performance are fabricated successfully using wet chemical etching, metal lift-off and air bridge interconnection technology.

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Two-Phase MOBILE Interconnection Schemes for Ultra-Grain Pipeline Applications

Núñez

Avedillo

Quintana

2013

Lecture Notes in Computer Science

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Monostable to Bistable (MOBILE) gates are very suitable for the implementation of gate-level pipelines which can be achieved without resorting to memory elements. MOBILE operating principle is implemented using two series connected Negative Differential Resistance (NDR) devices with a clocked bias. This paper describes and experimentally validates a two-phase clock scheme for such MOBILE based ultra-grain pipelines. Up to our knowledge it is the first MOBILE working circuit reported with this interconnection architecture. The proposed interconnection architecture is applied to the design of a 4-bit Carry Lookahead Adder.

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A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

Cited by 25 publications

References 19 publications

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications

InP-based RTD/HEMT monolithic integration

Two-Phase MOBILE Interconnection Schemes for Ultra-Grain Pipeline Applications

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