A novel hot carrier-induced blue light-emitting device

Mutlu, Selman; Erol, Ayşe; Arslan, Engin; Özbay, Ekmel; Li̇şesi̇vdi̇n, S. B.; Tiraş, E.

doi:10.1016/j.jallcom.2021.160511

Journal of Alloys and Compounds

2021

DOI: 10.1016/j.jallcom.2021.160511

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A novel hot carrier-induced blue light-emitting device

Selman Mutlu

Ayşe Erol

Engin Arslan

et al.

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Cited by 5 publications

References 40 publications

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A Rapidly Degradable Extruded Mg–Y–Zn–Ni Alloy for Fracturing Tool Applications

Jiang

et al. 2023

Adv Eng Mater

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Microstructure evolution, mechanical properties, and degradation behavior of a rapidly degradable extruded Mg-2Y-0.5Zn-0.5Ni (at%) alloy for fracturing tool applications are investigated. The microstructure of the extruded alloy is mainly composed of a recrystallization region and a nonrecrystallization region, in which the 18 R-long-period stacking order (LPSO) phase with two kinds of morphologies are distributed along extrusion direction. Parts of 18R-LPSO phase transfer into 14 H-LPSO phase during extrusion. A small amount of 14H-LPSO phases precipitate in the α-Mg matrix. The extruded alloy exhibits good mechanical properties, the ultimate tensile strength, tensile yield strength, and ultimate compressive stress of the extruded alloy are 364, 316, and 389 MPa, which increase by 97.5%, 334%, and 32.8% as compared with that of the as-cast alloy, respectively, which are attributed to grain refinement, LPSO phase strengthening, and texture strengthening. More importantly, the immersion and electronic chemical tests indicate that the extruded alloy has a high degradation rate (17.5 mg cm À2 h À1 ). The rapid degradation rate of the extruded alloy is mainly due to the introduction of a significant number of defects especially for the microgalvanic corrosion between the LPSO phase and the α-Mg matrix.

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A Rapidly Degradable Extruded Mg–Y–Zn–Ni Alloy for Fracturing Tool Applications

Jiang

et al. 2023

Adv Eng Mater

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Light Logic Gates with GaAs‐Based Structures

Sonmez,

Ardali,

Arpapay

et al. 2024

Physica Rapid Research Ltrs

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The novel XOR, OR, and NAND optical logic gates have been investigated using GaAs‐based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures (HELLISH) devices. The HELLISH devices are fabricated in the Top Hat‐HELLISH (TH‐HELLISH) geometry to achieve a nonlinear potential distribution at the p–n junction, which consists of a 13 nm thick GaAs quantum well placed on the n‐side of the junction. Logic gates whose input part is designed as an electric field output beam incorporate four independent contacts to the p‐ and n‐type layers. Electroluminescence measurements of the output beam are performed by applying a pulsed voltage of ≈150 V with a pulse width of 200 ns and a frequency of 20 kHz to the contacts of the TH‐HELLISH device. At room temperature, the primary emission wavelength of the optical logic gates is around 840 ± 1 nm. It is expected that optical logic gates obtained using this type of GaAs semiconductor structure have crucial potential to be components for high‐speed optical communication technology due to their simplicity, polarity‐independent operation, and emission wavelength.

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A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device

Mutlu,

Erol,

Tiras

2024

Journal of Luminescence

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A novel hot carrier-induced blue light-emitting device

Cited by 5 publications

References 40 publications

A Rapidly Degradable Extruded Mg–Y–Zn–Ni Alloy for Fracturing Tool Applications

A Rapidly Degradable Extruded Mg–Y–Zn–Ni Alloy for Fracturing Tool Applications

Light Logic Gates with GaAs‐Based Structures

A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device

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