A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability

Cheng, Junji; Meng, Wei; Yi, Bo; Huang, Haimeng; Ma, Keqiang; Guo, Xin; Yang, Hongqiang; Wang, Zhiming; Zhang, Guoyi

doi:10.1109/ispsd57135.2023.10147685

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2023

DOI: 10.1109/ispsd57135.2023.10147685

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A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability

Junji Cheng

Wei Meng

Bo Yi

et al.

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2024

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Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

Guo,

Ren,

Zhang

et al. 2024

Semicond. Sci. Technol.

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A novel two-dimensional mesh-like VLD termination (M-VLD) is proposed, which modifies the conventional ring-shaped track VLD termination (R-VLD) mask into an interconnected mesh-like structure. The comparative simulations and experiments show that M-VLD can achieve better blocking capability and reliability than R-VLD. Vertical Double Diffusion MOSFET (VDMOS) with M-VLD achieves a maximum breakdown voltage (BVmax) of 1588 V, which is 62 V higher than that of VDMOS with R-VLD. Furthermore, the devices with M-VLD exhibit lower leakage currents in 150 ℃ reverse-biased I-V test and successfully pass 1000 hours-125 ℃-1200 V high-temperature reverse bias (HTRB) test, while the devices with R-VLD fail to pass both tests.

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Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

Guo,

Ren,

Zhang

et al. 2024

Semicond. Sci. Technol.

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A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability

Cited by 1 publication

References 20 publications

Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

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