A novel LDMOS with circular drift region for uniform electric field distribution

Zhang, Chunwei; Yao, Zhongbo; Guo, Huajun; Gao, Song; Yue, Wenjing; Li, Yang; Kim, Eun Seong; Chen, Jian; Kim, Nam‐Young

doi:10.1016/j.micrna.2023.207511

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…Furthermore, the curvature effect demonstrates optimization of the field distribution [69] . Recently, Zhang et al designed a SiC lateral MOSFET power device featuring a circular drift region (Cir-LDMOS) [70] , as shown in Fig.…”

Section: Alternative Structuresmentioning

confidence: 99%

Review of the SiC LDMOS power device

Hu,

Yao,

et al. 2024

J. Semicond.

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Silicon carbide (SiC), as a third-generation semiconductor material, possesses exceptional material properties that significantly enhance the performance of power devices. The SiC lateral double-diffused metal–oxide–semiconductor (LDMOS) power devices have undergone continuous optimization, resulting in an increase in breakdown voltage (BV) and ultra-low specific on-resistance (R on,sp). This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices, including the trench-gate technology, reduced surface field (RESURF) technology, doping technology, junction termination techniques and so on. The paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.

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Section: Alternative Structuresmentioning

confidence: 99%

Review of the SiC LDMOS power device

Hu,

Yao,

et al. 2024

J. Semicond.

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show abstract

“…In power integrated circuits, the silicon-on-insulator lateral double-diffused metal oxide semiconductor field-effect transistor (SOI-LDMOS) is one of the key devices. It has been widely used due to the properties of excellent isolation performance, high breakdown voltage (BV), low leakage current, free of latch-up effect, and high compatibility with CMOS process [1][2][3][4]. The contradiction between BV and R on,sp is the major issue to be considered in SOI-LDMOS design [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study

Guo,

Dai,

Wang

et al. 2024

Semicond. Sci. Technol.

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In this paper, a novel double-gate trench silicon-on-insulator (SOI) lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS) with double-dielectric material (DGDK-LDMOS) is proposed. DGDK-LDMOS has two dielectric materials: a reverse-L-shaped high-k (HK) thin film and an low-k (LK) buried oxide layer. The HK thin film optimizes the electric field distribution on the drift region surface, attracting electric flux, and the excellent withstand voltage of the LK buried oxide layer can significantly improve the breakdown voltage (BV) and reduce specific on-resistance (Ron,sp) of the device. The modulation mechanism of LDMOS by HK thin film and LK buried oxide layer is analyzed. The results show that compared with conventional LDMOS (C-LDMOS), when the permittivity of HK thin film is 25 and the permittivity of LK buried oxide is 3, the BV of DGDK-LDMOS is increased by 89.6%, the Ron,sp is decreased by 26.4%, and the figure of merit (FOM, FOM = BV2/Ron,sp) is increased by 397.2% from 3.6 MW·cm−2 to 17.9 MW·cm−2. Meanwhile, the output characteristics, transfer characteristics, lattice temperature, AC characteristics and switching characteristics of DGDK-LDMOS are also discussed and compared.

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A novel LDMOS with circular drift region for uniform electric field distribution

Cited by 2 publications

References 14 publications

Review of the SiC LDMOS power device

Review of the SiC LDMOS power device

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study

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