A Novel Method to Modify the Lapping Uniformity for Silicon Wafer

Abstract

In this paper, a novel lapping method based on regulating the position of carrier centroid is proposed to modify interfacial normal pressure uniformity. Eight special points are selected to represent carrier weight. This lapping process can be divided into initial stage, regulated stage and stable stage. The purpose of initial stage is calculating the position of carrier centroid according to the equivalent mass of eight points. The regulated stage is to decrease total thickness variation (TTV) by regulating the position of weight. Finally, the stable stage will keep uniformity of material removal rate (MRR) uniform at each point. A 3-inch and 400 μm thickness silicon wafer is lapped to demonstrate the feasibility of this method. We can find that TTV of this wafer decreases from initial stage 20 μm to 3 μm and remain constant. Therefore, the uniformity of MRR has been greatly improved by this novel lapping method.