A novel model of hydrogen plasma assisted chemical vapor deposition of copper

Lakshmanan, Satish K.; Gill, William N.

doi:10.1016/s0040-6090(98)00958-4

Cited by 13 publications

(8 citation statements)

References 48 publications

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“…Strongly simplified particle‐in‐cell/Monte Carlo (PIC/MC) and fluid models including electrons and H

_{2}^{+}

where the ionic transport was controlled by symmetric charge transfer H

_{2}^{+}

/H 2 collisions were developed by Leroy et al9 to study the double layer formation. A fluid model including ${\rm \bar e}$ , H

_{3}^{+}

, H

_{2}^{+}

, H + but not negative ions or VDF, was developed by Lakshmanan et al10 to study the process of Cu thin film deposition from a precursor. A PIC/MC model including electrons, H

_{3}^{+}

and H + and a simplified calculation of the VDF was developed by Longo et al4 with the aim of discussing the channels producing H atoms.…”

Section: Peculiarities and Problems Of Hydrogen Rf Plasmasmentioning

confidence: 99%

Modeling of Capacitively Coupled RF Plasmas in H₂

Longo

Diomede

2009

Plasma Processes & Polymers

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Hydrogen is the main component of many feeding mixtures used for plasma processing. Despite this, the physics and chemistries of the parallel plate, capacitively coupled, radio frequency discharges in pure hydrogen are not yet fully understood. The state of the art of the modeling of this system is analyzed, including the problems posed by the electron and ion reactions, the ion heating, the chemistry of excited molecules, the non‐equilibrium distributions, the surface catalytic reactions, the double frequency discharge effects. Specific points are illustrated using new results obtained by a self‐consistent kinetic model developed in the last 10 years. A concluding discussion summarizes the achievements and open problems of the field.

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“…Strongly simplified particle‐in‐cell/Monte Carlo (PIC/MC) and fluid models including electrons and H

_{2}^{+}

where the ionic transport was controlled by symmetric charge transfer H

_{2}^{+}

/H 2 collisions were developed by Leroy et al9 to study the double layer formation. A fluid model including ${\rm \bar e}$ , H

_{3}^{+}

, H

_{2}^{+}

, H + but not negative ions or VDF, was developed by Lakshmanan et al10 to study the process of Cu thin film deposition from a precursor. A PIC/MC model including electrons, H

_{3}^{+}

and H + and a simplified calculation of the VDF was developed by Longo et al4 with the aim of discussing the channels producing H atoms.…”

Section: Peculiarities and Problems Of Hydrogen Rf Plasmasmentioning

confidence: 99%

Modeling of Capacitively Coupled RF Plasmas in H₂

Longo

Diomede

2009

Plasma Processes & Polymers

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“…On the other hand, N 2 /H 2 plasmas are employed in ashing resists off of low-k dielectric layers [5] and in growing GaN by nitridation of GaAs [6]. Finally, hydrogen diluted mixtures have been used for the deposition of Cu films from organometallic precursors [7]. All these applications will benefit by better understanding the kinetics of hydrogen plasmas.…”

Section: Introduction and Literature Reviewmentioning

confidence: 99%

“…Such chemical kinetics models played an important role in clarifying the hydrogen plasma chemistry, particularly by providing a quantitative account of the mechanisms of vibrational excitation, molecular dissociation, and ion production, but they were unable to account for the effects of space charge which are necessary in particular for a proper description of CCRF hydrogen discharges. As a result, models were developed coupling species transport and chemical reaction [7,[27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45]. These models varied in the type of formulation (kinetic, fluid or hybrid), the number of spatial dimensions, the degree of self-consistency, and the completeness of the chemical reaction scheme.…”

Section: Introduction and Literature Reviewmentioning

confidence: 99%

Hybrid simulation of a dc-enhanced radio-frequency capacitive discharge in hydrogen

Diomede¹,

Longo²,

Economou³

et al. 2012

J. Phys. D: Appl. Phys.

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A PIC-MCC/fluid hybrid model was employed to study a parallel-plate capacitively coupled radio-frequency discharge in hydrogen, under the application of a dc bias voltage. When a negative dc voltage was applied to one of the electrodes of a continuous wave (cw) plasma, a 'beam' of secondary electrons was formed that struck the substrate counter-electrode at nearly normal incidence. The energy distribution of the electrons striking the substrate extended all the way to V RF + |V dc |, the sum of the peak RF voltage and the absolute value of the applied dc bias. Such directional, energetic electrons may be useful for ameliorating charging damage in etching of high aspect ratio nano-features. The vibrational distribution function of molecular hydrogen was calculated self-consistently, and was found to have a characteristic plateau for intermediate values of the vibrational quantum number, v. When a positive dc bias voltage was applied synchronously during a specified time window in the afterglow of a pulsed plasma, the ion energy distributions (IEDs) of positive ions acquired an extra peak at an energy equivalent of the applied dc voltage. The electron energy distribution function was slightly and temporarily heated during the application of the dc bias pulse. The calculated IEDs of H + 3 and H + 2 ions in a cw plasma without dc bias were found to be in good agreement with published experimental data.

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“…The following boundary conditions were taken into the numerical calculation from refs. 5 and 6. The C r , C i , and C e concentrations at t = 0 were 10 15 , 10 10 , and 10 10 cm −3 .…”

Section: Background Of Pulsed Hydrogen Plasma Treatmentmentioning

confidence: 95%

“…2.2), numerical calculation of eqs. (1) and (2) was done with reference to the literature 4, 5. The following boundary conditions were taken into the numerical calculation from refs.…”

Section: Background Of Pulsed Hydrogen Plasma Treatmentmentioning

confidence: 99%

Surface modification of poly(tetrafluoroethylene) with pulsed hydrogen plasma

Inagaki

Tasaka

Narushima

et al. 2001

J of Applied Polymer Sci

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Surface modification of polymers by pulsed plasma has been investigated to minimize degradation reactions occurring at the same time as the surface modification reactions. The hydrogen radical, ion, and electron concentrations in the hydrogen plasma were simulated as a function of the elapsed time after turning off the discharge. The contact angle measurement showed that hydrogen plasma treatment, regardless of pulsed or continuous plasma, led to degradation reactions as well as defluorination and oxidation on PTFE surfaces. The degradation reactions of PTFE chains initiated by the pulsed hydrogen plasma were not as vigorous as those by the continuous hydrogen plasma. A combination of the on-time/off-time of 30/270s in the pulsed hydrogen plasma was efficacious in modifying PTFE surfaces.

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A novel model of hydrogen plasma assisted chemical vapor deposition of copper

Cited by 13 publications

References 48 publications

Modeling of Capacitively Coupled RF Plasmas in H₂

Modeling of Capacitively Coupled RF Plasmas in H₂

Hybrid simulation of a dc-enhanced radio-frequency capacitive discharge in hydrogen

Surface modification of poly(tetrafluoroethylene) with pulsed hydrogen plasma

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A novel model of hydrogen plasma assisted chemical vapor deposition of copper

Cited by 13 publications

References 48 publications

Modeling of Capacitively Coupled RF Plasmas in H2

Modeling of Capacitively Coupled RF Plasmas in H2

Hybrid simulation of a dc-enhanced radio-frequency capacitive discharge in hydrogen

Surface modification of poly(tetrafluoroethylene) with pulsed hydrogen plasma

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Product

Resources

About

Modeling of Capacitively Coupled RF Plasmas in H₂

Modeling of Capacitively Coupled RF Plasmas in H₂