A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

Two-dimensional materials for future information technology: status and prospects

“…The growth of 2D materials is so important because they are the basis for the construction of 2D information devices and their integration, and their quality represents how far 2D electronic information technology can go. Recently, we organized a special issue on 2D materials and device applications, and these latest developments also make the future of this direction much clearer, and further strengthen our confidence to continue to move forward [21][22][23][24][25][26][27][28][29][30].…”

PZT-Enabled MoS2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing

“…The limitation prevents the progressive downscaling of the supply voltage ( V DD ), resulting in the inability to decrease the leakage current and static power consumption. , Therefore, identifying innovative materials, structures, or transport mechanisms to overcome the “Boltzmann tyranny” to achieve a low-SS transistor is crucial. Two-dimensional (2D) transition-metal dichalcogenides (TMDs), especially MoS 2 , are being investigated as potential channel materials for future device technologies, − as their atomic-scale thickness provides an excellent electrostatic control ability. , Several steep-slope devices utilizing 2D materials have been prepared to achieve SS values of <60 mV decade –1 at room temperature, such as nanoelectromechanical FETs (NEM-FETs), Dirac-source FETs (DS-FETs), impactionization FETs (II-FETs), tunneling FETs (T-FETs), − resistive gate FETs (RG-FETs), ,, and negative-capacitance FETs (NC-FETs). ,− …”