A Novel Over-Push Gain-Boosting Technique for Embedded Amplifier at Near-f _max Frequencies

Analyze the Loss Utilization in Near-fmax Embedded Amplifiers Using Uniform 3D Gain Space: the Super-Gain-Boosting Technique

“…Secondly, it causes the G ma to deviate from the point of G ma_upper_limit . The later issue can be addressed by employing the over-push technique [26]. By deliberately pushing the gain-state point outside of the stability boundary, taking into account the losses from the matching network, the gain-state point can ultimately move back towards the G ma_upper_limit with the decreased U.…”

A 194 GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65 nm CMOS

“…To improve the power gain of the amplifier, great efforts have been dedicated to incorporate various embedding network to the active device. By judiciously adopting Y/Zembedding [6], Y/PreZ-embedding [7] and Z/PreY-embedding [8] network, the maximum available gain (Gma) of an active two-port network (A2P) can be improved, until G ma gets to it upper limit which is G ma_upper_limit = [9],…”

A novel gain‐boosting structure with Z‐embedding and parallel pre‐embedding network for amplifiers at near‐fmax frequencies

“…To improve the power gain of the amplifier at near-f max frequencies, great efforts have been made to introduce "embedding network" to the active device. [13][14][15][16][17] It has been proven that by properly adopting linear, lossless, and reciprocal embedding network (LLREN), the maximum available gain (G ma ) of an active two-port network (A2P) can be improved while keeping the network unconditionally stable, 18 until G ma gets to the upper limit, which is given as…”

“…It makes the silicon‐based terahertz amplifier without any gain‐boosting techniques exhibit poor power amplification capacity, thus not able to meet the demand of the system requirements. To improve the power gain of the amplifier at near‐ f max frequencies, great efforts have been made to introduce “embedding network” to the active device 13–17 . It has been proven that by properly adopting linear, lossless, and reciprocal embedding network (LLREN), the maximum available gain ( G ma ) of an active two‐port network (A2P) can be improved while keeping the network unconditionally stable, 18 until G ma gets to the upper limit, which is given as , 19,20 where U denotes Mason's U 21 .…”