A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO<sub>2</sub>–Si

Xiao, Shilin; Wang, H; Yu, Changrui; Xia, Yuxing; Lü, Jing; Wang, Z H

doi:10.1088/1367-2630/10/3/033018

Cited by 34 publications

(23 citation statements)

References 40 publications

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“…The LPE is generally acknowledged as an attribute characteristic of some semiconductor materials since being discovered by Schottky and expanded upon by Wallmark in floating Ge p‐n junctions . Hitherto, LPE gets widely used in photoelectric detection and is considered as an effective method to measure the characteristics of materials . A deeper understanding of hot functional materials, including transition metal dichalcogenides (TMDCs), carbon isotope, III‐V compound semiconductor, MS, and graphene, could be learned from experiments of LPE.…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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“…Alternatively, other Schottky barrier structures, some of which include oxides, have shown very high sensitivities, some as high as 97 mV/mm, but suffer from quite short linear regions of about 4 mm [8], [9].…”

Section: Introductionmentioning

confidence: 99%

The Role of the Schottky Metal in Optical Responses of Optical Position Sensitive Detector

Henry

Livingstone

2011

IEEE Sensors J.

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The role of the Schottky barrier metal in position sensitive detector (PSD) formation is more complex than just acting to form a pseudo p-n junction and, in fact, it appears that it is the optical properties of this material that play a role in determining device performance. In this work titanium-silicon Schottky barrier PSDs were tested under 4 different wavelength LEDs and it was found that device performance was much better under long wavelength light. Along with the usual mechanisms, it is conjectured that this is related to the refractive index of the Schottky metal.PSDs with high sensitivities and strongly linear characteristics are much desired and many very high sensitivities have been reported upon by others, however, it is also important to consider the size of the linear region. The highest output measured here in response to 1 mW of LED light was 26 mV/mm over 9 mm surface path length.Shorter wavelength light has resulted in sensitivities which are significantly lower than the sensitivities obtained from longer wavelength light, but with higher linearities. The higher sensitivities are considered to be due to the absorption characteristics of the Schottky metal and this is attributed to recombination effects and differing transport paths that carriers take when illuminated by different wavelength light.Index Terms-Optical position sensitive detector (PSD), Schottky barrier.

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“…The wavelength of the laser we used is 532 nm with a power of 50 mW. Experimental details are similar to our previous papers [16].…”

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confidence: 99%

Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si

2012

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In this study, we report our new finding of bipolar resistance effect (BRE) in quantum dots (QDs)-embedded structure of Zn/CdSe/Si. This effect features a remarkable linear resistance change and an enhanced BRE when a laser moves along the surface of the structure. The results show that the combination of BRE with QDs is useful for applications and may add a new functionality to QDs-based optoelectronic devices.

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A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO₂–Si

Cited by 34 publications

References 40 publications

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

The Role of the Schottky Metal in Optical Responses of Optical Position Sensitive Detector

Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si

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A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO2–Si

Cited by 34 publications

References 40 publications

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

The Role of the Schottky Metal in Optical Responses of Optical Position Sensitive Detector

Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si

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A novel position-sensitive detector based on metal–oxide–semiconductor structures of Co–SiO₂–Si