2012
DOI: 10.1088/1674-1056/21/9/098503
|View full text |Cite
|
Sign up to set email alerts
|

A novel sensitivity model for short nets

Abstract: For modern processes at deep sub-micron technology nodes, yield design, especially the design at the layout stage is an important way to deal with the problem of manufacturability and yield. In order to reduce the yield loss caused by redundancy material defects, the choice of nets to be optimized at first is an important step in the process of layout optimization. This paper provides a new sensitivity model for a short net, which is net-based and reflects the size of the critical area between a single net and… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2013
2013
2016
2016

Publication Types

Select...
4

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 16 publications
0
2
0
Order By: Relevance
“…With the constant development of the integrated circuit (IC) technology, the IC feature size is decreasing, and therefore the IC yield loss due to manufacturing defects [1][2][3][4][5] becomes more and more serious, resulting in failing to obtain the expected yield by designing integrated circuits just based on the IC design rules. [6][7][8][9] The very large scale integrated circuit (VLSI) is sensitive to defects in the IC manufacturing process, and the rate of the IC yield loss which is caused by defects in the manufacturing process is more than 80%.…”
Section: Introductionmentioning
confidence: 99%
“…With the constant development of the integrated circuit (IC) technology, the IC feature size is decreasing, and therefore the IC yield loss due to manufacturing defects [1][2][3][4][5] becomes more and more serious, resulting in failing to obtain the expected yield by designing integrated circuits just based on the IC design rules. [6][7][8][9] The very large scale integrated circuit (VLSI) is sensitive to defects in the IC manufacturing process, and the rate of the IC yield loss which is caused by defects in the manufacturing process is more than 80%.…”
Section: Introductionmentioning
confidence: 99%
“…Wote super absorbent is an organicinorganic compound water retention agent synthesized using the hybridizing process of polyacrylic acid and attapulgite. After five repetitions moisture absorption and release, its water absorbing capacity is still greater than 85 % of its original water absorbing capacity [16][17][18] . Compared with all other existing types of water retention agents, Wote super absorbent can not Asian Journal of Chemistry;Vol.…”
mentioning
confidence: 99%