“…22,23 There are several processing methods available for modifying the Si surface morphology. 1,5,7,[13][14][15]17,19,24,25 For example, etching methods, including chemical, electrochemical and dry etching, have been widely employed. 26,27 Dynamic etching of porous Si surfaces to a thickness of 100 nm has been demonstrated by Striemer and Fauchet, 27 who achieved an average reflection of 3.7% across the terrestrial solar spectrum.…”