A novel symmetric GaN MESFET by dual extra layers of Si3N4

Ramezani, Zeinab; Aminbeidokhti, Amirhossein

doi:10.1016/j.physe.2015.02.025

Cited by 21 publications

(5 citation statements)

References 13 publications

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“…The bit error rate is enhanced in optical communication systems by using NRZ, RZ pulse generators with different optical modulation techniques [16][17][18][19][20]. NRZ/EAM, NRZ/MZM, RZ/EAM, and RZ/MZM are constructed by using optisystem simulation software in the presence of optical power variations from 15 dBm to 20 dBm in order to achieve the minimum BER values for different 4 bit sequence value of 1010, and 8 bit sequence value of 10101100 [21][22][23][24][25].…”

Section: Related Workmentioning

confidence: 99%

High speed pulse generators with electro-optic modulators based on different bit sequence for the digital fiber optic communication links

Eid

Seliem

Rashed

et al. 2021

IJEECS

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<p><span>The paper outlines the simulation of various pulse generators for the enhancement of optical fiber access transmission networks within flow rate of 10 Gbps and transmission range of 100 km. The pulse generators are gaussian, hyperbolic secant, triangle, sine, raised cosine in the transmission stage. Proposed pulse generators are mixed with both electro-absorption modulator (EAM) and mach-zehnder modulator (MZM) for efficient transmission. We have compared the max. the quality factor with using proposed pulse generators against nonreturn to zero (NRZ) return to zero (RZ) pulse generators in the previous research works for different bit sequences. The signal power amplitude is tested for both optical fiber and PIN photodetector optical time-domain visualizer and RF spectrum analyzer by using in the optimum cases for different bit sequence. It is observed that proposed pulse generators/EAM have presented an efficient increase in Q-factor value compared with proposed pulse generators/MZM for different bit sequences.</span></p>

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Section: Related Workmentioning

confidence: 99%

High speed pulse generators with electro-optic modulators based on different bit sequence for the digital fiber optic communication links

Eid

Seliem

Rashed

et al. 2021

IJEECS

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“…According to Equation (4), the maximum output power density is calculated for both the RPC-HEMT and the C-HEMT. 41,42 The maximum power density of the RPC-HEMT compared with the C-HEMT improves. Therefore, the RPC-HEMT will be suitable for high-power applications.…”

Section: Characteristicsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

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In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S22) and the short‐circuit current gain (h21) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

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“…According to Moore's law, however, it is unlikely that CMOS devices will retain their advantage due to short‐channel effects (SCEs). Although many recent papers present a modified version of metal–oxide–semiconductor field‐effect transistor (MOSFET)‐based structures to improve electrical performance, SCEs are still a significant obstacle for these new structures …”

Section: Introductionmentioning

confidence: 99%

Proposal of an Embedded Nanogap Biosensor by a Graphene Nanoribbon Field‐Effect Transistor for Biological Samples Detection

Anvarifard

Ramezani

Amiri

2019

Physica Status Solidi (a)

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Herein, it is examined how a graphene nanoribbon field‐effect transistor (GNRFET) can be a useful nanoscale device, along with how to use an embedded nanogap inside a top gate oxide to form a biosensor. A streptavidin–biotin binding system with the dielectric constant of 2.1 is considered as a biological test sample for detection. Introducing the biological sample to the nanogap without a buffer solution modifies the electrostatic modulation in the graphene sheet, resulting in a change in the drain current. The order of change in the drain current is considered a criterion to measure the sensitivity of the proposed biosensor. A detailed investigation and discussion of the biasing conditions during the detection process reveal the optimal bias for the proposed biosensor to achieve a greater sensitivity, all while maintaining a desirable electrical performance.

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A novel symmetric GaN MESFET by dual extra layers of Si3N4

Cited by 21 publications

References 13 publications

High speed pulse generators with electro-optic modulators based on different bit sequence for the digital fiber optic communication links

High speed pulse generators with electro-optic modulators based on different bit sequence for the digital fiber optic communication links

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Proposal of an Embedded Nanogap Biosensor by a Graphene Nanoribbon Field‐Effect Transistor for Biological Samples Detection

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