2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) 2007
DOI: 10.1109/eosesd.2007.4401765
|View full text |Cite
|
Sign up to set email alerts
|

A novel testing approach for full-chip CDM characterization

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2009
2009
2021
2021

Publication Types

Select...
4
1

Relationship

1
4

Authors

Journals

citations
Cited by 8 publications
(1 citation statement)
references
References 6 publications
0
1
0
Order By: Relevance
“…Several test methods have been introduced for generating charged device model (CDM) stress at the wafer level [1]- [4]. Wafer-level testing is desirable for multiple reasons, including reliability assessment earlier in the design phase (before packaging), elimination of packaging cost, and elimination of unrealistic package parasitics when stressing small test structures.…”
Section: Introductionmentioning
confidence: 99%
“…Several test methods have been introduced for generating charged device model (CDM) stress at the wafer level [1]- [4]. Wafer-level testing is desirable for multiple reasons, including reliability assessment earlier in the design phase (before packaging), elimination of packaging cost, and elimination of unrealistic package parasitics when stressing small test structures.…”
Section: Introductionmentioning
confidence: 99%