A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles

Volkman, Steven K.; Mattis, Brian; Molesa, Steven; Lee, J.B.; Vornbrock, Alejandro de la Fuente; Bakhishev, Teymur; Subramanian, Vivek

doi:10.1109/iedm.2004.1419287

Cited by 35 publications

(23 citation statements)

References 2 publications

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“…However, most of the present printable semiconductors suffer from poor air-stability, complicated packaging, degraded device lifetime and toxic nature of organics and chalcogenides, etc. Therefore, n-type ZnO nanostructure is a possible alternative because of its soluble nature, optical transparency and it can be easily implemented with the existing processing technology [19]. The template based synthesis of nanostructures in a membrane is an elegant chemical approach for the fabrication of aligned nanowires/nanotubes with a good control over their diameter and aspect ratio.…”

Section: Introductionmentioning

confidence: 99%

Templated one step electrodeposition of high aspect ratio n-type ZnO nanowire arrays

Sharma

Rammohan

Sharma

2010

Journal of Colloid and Interface Science

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Section: Introductionmentioning

confidence: 99%

Templated one step electrodeposition of high aspect ratio n-type ZnO nanowire arrays

Sharma

Rammohan

Sharma

2010

Journal of Colloid and Interface Science

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“…Therefore, the promise of oxide semiconductors as an enabling technology is only likely to be realised when a combination of simple processing and high performance can be achieved. Among the many metal oxide semiconductors known [10,[22][23][24][25][26] the II-VI group compound ZnO has attracted most interest because of its non-toxicity [17] and exceptionally high electron mobility. [13,27,28] In its crystalline form at room temperature, ZnO is characterised by a wide bandgap (~3.4 eV) and high optical transparency.…”

mentioning

confidence: 99%

“…[7] These include, sputtering, [8][9][10] pulsed-laser deposition (PLD), [11] metalorganic chemical vapour deposition (MOCVD), [12,13] as well as solution processing methods such as dip coating, [14] spin coating [15][16][17][18] and spray pyrolysis (SP). [19][20][21] Solution processing, in particular, offers a number of advantages, which are well known from the area of organic electronics, with the most important being the prospect of easy patterning on large area substrates.…”

mentioning

confidence: 99%

High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

et al. 2009

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Research on solution processible semiconducting materials is rapidly making progress towards the goal of providing viable alternatives to silicon-based technologies for applications where lower-cost manufacturing and new product features such as mechanical flexibility and optical transparency are desired. One family of materials that has been the subject of intense research over the past twenty years is organic semiconductors.[1] Use of organic materials offers the prospect of low manufacturing cost combined with some desirable physical characteristics such as ease of processing and mechanical flexibility. Despite the impressive progress achieved in recent years a number of obstacles, especially poor air-stability, device performance that is insufficient for a variety of applications and device to device variability, have to be overcome before the advantageous manufacturability, and hence the economic benefits associated with organic semiconductors, can be fully exploited.While research in the area of organic materials and devices has been intensifying, a different class of semiconducting materials, namely metal oxide semiconductors (MOxS), has emerged as possible alternative technology.[2] Metal oxides incorporate important qualities that are currently absent from organic-based semiconductors. For instance, they generally exhibit higher carrier mobilities which are already sufficient for use in optical displays, such as current-driven organic light-emitting diode (OLED) based displays. An additional advantage of MOxS relevant to many electronic applications is the superb optical transparency resulting -2 -from their wide bandgap. The latter makes oxide semiconductors particularly interesting for use in transparent electronics [3] as well as in backplanes for the next generation of currentdriven displays. [4,5] For application in see-through electronics, in particular, transparent thin-film transistors (TFTs) with high switching speeds and low power consumption are required.[6] So far the opacity of amorphous silicon and the insufficient performance of organic semiconductors have impeded the development of such devices. In this respect, MOxS materials simultaneously fulfil the requirements for optical transparency and high charge carrier mobility. In addition, they provide excellent chemical stability combined with mechanical robustness. [7] A further advantage associated with MOxS is the diverse range of techniques that can be employed for thin-film deposition.[7] These include, sputtering, [8][9][10] pulsed-laser deposition (PLD), [11] metalorganic chemical vapour deposition (MOCVD), [12,13] as well as solution processing methods such as dip coating, [14] spin coating [15][16][17][18] and spray pyrolysis (SP). [19][20][21] Solution processing, in particular, offers a number of advantages, which are well known from the area of organic electronics, with the most important being the prospect of easy patterning on large area substrates. In most cases, however, control over the morphology of solution processed film...

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“…However, at intermediate temperatures, it is possible to produce thin films that have gone through good sintering processes, resulting in the formation of films with improved thin film characteristics. The resultant thin films may then be used to form thin film transistors [14]. For example, in conjunction with SiO 2 gate dielectrics and Au contacts, simple bottom-gated ZnO thin film transistors have been demonstrated (Figure 9.4).…”

Section: Transparent Conductive Oxide Nanoparticlesmentioning

confidence: 99%

Solution‐Processed Electronics Based on Transparent Conductive Oxides

Subramanian¹

2010

Transparent Electronics

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A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles

Cited by 35 publications

References 2 publications

Templated one step electrodeposition of high aspect ratio n-type ZnO nanowire arrays

Templated one step electrodeposition of high aspect ratio n-type ZnO nanowire arrays

High‐Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

Solution‐Processed Electronics Based on Transparent Conductive Oxides

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