1999
DOI: 10.1006/spmi.1998.0636
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A novel transport model for the metal-to-insulator transition in quasi-three-dimensional wide quantum wells

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Cited by 2 publications
(1 citation statement)
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“…The wide parabolic quantum wells at large filling factors had been created by the Narrow Gap Semiconductor PbTe and instead of quantum Hall plateaus magneto-resistance fluctuations have been found at temperatures below 100 mK and at small current of the order of a few nA. The temperature and current dependence of these fluctuations that also appeared in a so-called non-local contact configuration even at macroscopic sample size [30] indicated the involvement of quantum channels [31]. In this context, the relations between the potentials of channels that meet at non-equilibrium situation seem to be valid also for that regime far from the standard quantum Hall regime in the clean two-dimensional case.…”
Section: Discussionmentioning
confidence: 98%
“…The wide parabolic quantum wells at large filling factors had been created by the Narrow Gap Semiconductor PbTe and instead of quantum Hall plateaus magneto-resistance fluctuations have been found at temperatures below 100 mK and at small current of the order of a few nA. The temperature and current dependence of these fluctuations that also appeared in a so-called non-local contact configuration even at macroscopic sample size [30] indicated the involvement of quantum channels [31]. In this context, the relations between the potentials of channels that meet at non-equilibrium situation seem to be valid also for that regime far from the standard quantum Hall regime in the clean two-dimensional case.…”
Section: Discussionmentioning
confidence: 98%