A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

Wang, Ying; Liu, Yanjuan; Yu, Cheng-Hao; Cao, Fei

doi:10.1109/led.2014.2382112

Cited by 22 publications

(13 citation statements)

References 7 publications

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“…So gate charge has to be reduced without affecting the on-resistance and speed can be increased. The n+ -p junction is introduced in gate, which reduces the gate charge by 49.5% without changing the R on [14]. An inverted L-shaped source trench power MOSFET reduces the 30% R on [15].…”

Section: Trench Metal Oxide Semiconductor (Trench Mos)mentioning

confidence: 99%

A Review on Power MOSFET Device Structures

Kaur¹

2017

IJRASET

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Section: Trench Metal Oxide Semiconductor (Trench Mos)mentioning

confidence: 99%

A Review on Power MOSFET Device Structures

Kaur¹

2017

IJRASET

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“…shield‐gate (or split‐gate) trench power MOSFETs are widely used in low‐voltage power conversion systems, especially for high‐frequency applications, because of their advantages in switching performance, current handling capability and robustness [1]. The shielded gate (SG) electrode is located at the lower portion of the trench, acting as a buried source‐connected field plate [2–5]. It significantly reduces the gate‐to‐drain capacitance ( C GD ) by shielding the gate and drain coupling effect.…”

Section: Introductionmentioning

confidence: 99%

A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

Deng

Wang

Tan

et al. 2022

IET Power Electronics

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A 100‐V Taper‐Shielded trench Gate (TSG) power metal‐oxide‐semiconductor field‐effect transistor (MOSFET) with superior figure‐of‐merit (FOM) is proposed and investigated in this paper. The gate of the proposed TSG‐MOSFET has a tapered shape to reduce the gate‐to‐drain overlap capacitance (CGD) and the gate charge (QG). The vertical drift region doping profile of the proposed TSG‐MOSFET is enhanced in two ways. First is to use a multi‐step epitaxial growth to produce a non‐uniform doping profile. Second is to place a lightly doped n‐region at the trench bottom. The bulk electric field in the blocking state can be more evenly distributed, allowing a shorter drift region and lower specific ON‐resistance (RON,sp). Both technology computer‐aided design (TCAD) simulations and experiments were performed to evaluate the proposed device. The proposed device exhibits an improved RON,sp of 27 mΩ·mm2 with a breakdown voltage (BV) of 105 V. The third quadrant performance and the reverse recovery characteristics are also greatly improved. During reverse conduction, the amount of the excessive carriers stored in the drift region is reduced due to the shortened drift region and optimized drift region doping profile. The reverse recovery charge (Qrr) is decreased from 70 to 49 nC. When compared to its state‐of‐the‐art counterparts, the measured [RON × QG] FOM and the Qrr showed a reduction of 23% and 28%, respectively.

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“…The electrical drive's dynamic performance is strongly influenced by the technology of the power switches on which the inverter's topology is based. In the field of low voltage switching devices (with breakdown voltage up to 100 V), silicon (Si) MOSFETs with in trench-gate technology are low-cost standard switches available in a wide range of current rating and can reach quite satisfactory high switching frequencies [4,5]. Nowadays, high electron mobility transistors (HEMT) Gallium Nitride (GaN) devices are becoming increasingly used, especially in low voltage applications, due to their superior features, such as high dynamic characteristics, high power density and very high-temperature ratings, compared to pure silicon MOSFET devices with similar current rating [6].…”

Section: Introductionmentioning

confidence: 99%

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

et al. 2021

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The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

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A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

Cited by 22 publications

References 7 publications

A Review on Power MOSFET Device Structures

A Review on Power MOSFET Device Structures

A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

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