A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application

Bishop, W.L.; Mckinney, K.; Mattauch, R.J.; Crowe, T.W.; Green, G.

doi:10.1109/mwsym.1987.1132483

Cited by 91 publications

(22 citation statements)

References 10 publications

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“…The frames are then formed by wet etching in an H O /NH OH mixture [15] that selectively etches GaAs relative to AlGaAs. A brief nonselective etch (phosphoric acid/hydrogen peroxide/water) is then used to remove the AlGaAs etch stop.…”

Section: B Diode and Membrane Fabricationmentioning

confidence: 99%

2.5-THz GaAs monolithic membrane-diode mixer

Siegel

Smith

Graidis³

et al. 1999

IEEE Trans. Microwave Theory Techn.

172

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Abstract-A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined monolithic GaAs circuitry to form, for the first time, a robust, easily fabricated, and assembled room-temperature planar diode receiver at frequencies above 2 THz. Measurements of receiver performance, in air, yield a T receiver of 16 500-K double sideband (DSB) at 8.4-GHz intermediate frequency (IF) using a 150-K commercial Miteq amplifier. The receiver conversion loss (diplexer through IF amplifier input) measures 16.9 dB in air, yielding a derived "front-end" noise temperature below 9000-K DSB at 2514 GHz. Using a CO 2 -pumped methanol far-infrared laser as a local oscillator at 2522 GHz, injected via a Martin-Puplett diplexer, the required power is 5 mW for optimum pumping and can be reduced to less than 3 mW with a 15% increase in receiver noise. Although demonstrated as a simple submillimeter-wave mixer, the all-GaAs membrane structure that has been developed is suited to a wide variety of low-loss high-frequency radio-frequency circuits.

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Section: B Diode and Membrane Fabricationmentioning

confidence: 99%

2.5-THz GaAs monolithic membrane-diode mixer

Siegel

Smith

Graidis³

et al. 1999

IEEE Trans. Microwave Theory Techn.

172

View full text Add to dashboard Cite

show abstract

“…Several laboratories have developed whiskerless diodes intended to be surface mounted in planar structures (45)(46)(47)(48)(49). In an elegant design an etched surface channel and an associated air bridge is used (see Fig.…”

Section: Schottky Barrier Diode Developmentmentioning

confidence: 99%

“…In an elegant design an etched surface channel and an associated air bridge is used (see Fig. 8) (47)(48)(49).This approach allows a precise photo-lithographic definiton of the air bridge and uses conventional etching technology. The diode has been so far demonstrated in a mixer for 90 -1 10 GHz (48), showing virtually the same conversion loss and noise perfomance as the best whisker contacted mixers.…”

Section: Schottky Barrier Diode Developmentmentioning

confidence: 99%

New Solid State Devices and Circuits for Millimeter Wave Applications

Kollberg

1991

21st European Microwave Conference, 1991

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In this paper we will address some new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the back to back Banier xi-n+ (bbBNN) varactor diode for multipliers, the single barier varactor (SBV) diode for multipliers, and new achievements conceming the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. A quasioptical design approach with many devices distributed over a surface several wavelengths in dimensions can be used to distibute large power to hundreds of low power devices. This technique is referred to as quasioptical array or grid technique. A few selected recent achievements are presented, demonstrating principles concerning arrays for oscillators, amplifiers, multipliers, phase shifters and mixers. MIRQQ.UCTIQMillimeter wave techniques is becoming more important as new millimeter wave technology emerge and stimulate development of new systems for new applications. In this paper we will briefly discus some "old" devices, but essentially focus on new devices and circuits conceptually different to well known microwave devices and circuits. Hence we will briefly discuss devices such as the quantum well diode for oscillators, multipliers and mixers, the bbBNN varactor diode for multipliers, the single barrier varctor (SBV) diode for multipliers, and new achievements concerning the design and fabrication of Schottky diodes.Concerning circuits, we focus on new approaches for the basic problem of handling large powers at millimeter waves (and microwaves) using solid state devices. High power handling for a single device means that it has to take high voltages and currents leading to break down phenomena and excess heating. Both problems worsen at higher frequencies since the dimensions of essentially any device have to shrink with increasing frequency in order to keep the impedance reasonable and the parasitics of the device low (2,24).An elegant way to improve the power handling is to let many devices be distributed over a surface several wavelengths in dimensions such that quasi-optical techniques can be used to couple the power to the devices (28,35). This technique is referred to as quasioptical array or grid technique. In fact almost any solid state device can be integrated in an array and thereby improve the power handling capacity. Below a few selected recent achievements are presented, demonstrating principles conceming arrays for oscillators, multipliers, phase shifters and mixers. OSCILAIQORaFor applications using millimeter and submillimeter waves, there is a strong demand for solid state high efficiency sources with low and medium output power. It is to day possible to

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“…A varactor type of device like the Schottky diode or the heterostructure barrier varactor(HBV) diode is a nonlinear element that can generate higher order frequencies by multiplication. Planar Schottky diodes were introduced over a decade ago [3][4] and now have been successfully demonstrated well into the terahertz range [5][6].…”

Section: Introductionmentioning

confidence: 99%