A novel x-band oscillator using substrate integrated waveguide resonators

Abstract

In this paper, a novel x-band oscillator using a substrate integrated waveguide (SIW) resonator has been proposed and developed for microwave applications. A high integrated X-band oscillator, which consists of a SIW resonator whose dimension is 15mm in length and 9.2mm in width, is designed. An NEC low noise GaAs JFET NE3515s02 is used as the active device. The oscillator is designed by negative resistance method based on Agilent ADS. The oscillator frequency is mainly decided by the SIW resonator. Measured results show that the oscillation frequency is 9.89GHz. The output power is 5.75 dBm and phase-noise of -117 dBc/Hz @1MHz, which is very suitable for applications of radar and communication systems.