A Novel Zero Bias Microstrip MESFET Power Limiter

Abstract

In this article, a novel limiters power is designed and validated by ADS software. The new limiter is based on a mictrostrip circuit and uses M SFET transistors and Schottky diode as actives components. This Power Limiter have been optimized in two steeps: the first circuit is composed of one stage. Simulation of this circuit presents some limitation in termes of limitation rate. To improve this performance, a new circuit composed of two stages is simulated and optimized. The final circuit exhibits 25 dB of limitation rate while insertion loss is-1 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.

Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection

“…An RP allows input power below a certain value to pass through ideally without loss, and attenuating input signal strength when it exceeds the threshold. A number of device technologies have been developed to achieve RF and microwave RPs, including Schottky barrier diodes (SBDs) [5][6][7], p-i-n diodes [3,8,9], and transistors [10][11][12]. Employing a steep-mesa technology, a gallium nitride (GaN) SBD based RP demonstrated a low on-resistance (R ON ) and a power compression of 3.3 dB with a corresponding input power of 20 dBm at 2 GHz [7].…”