A novelty design for radiation resistance of SiC by recrystallization-induced stacking faults

Li, Deyuan; Li, Hui; Li, Bingsheng

doi:10.1016/j.jmrt.2022.06.124

Cited by 5 publications

(3 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As common "wrong" stacking sequences, stacking faults can enhance phonon scattering and reduce thermal conductivity [20]. However, only a limited number of papers have described the influence of stacking faults on the performance of the SiC [21][22][23][24][25]. [16,37] To design high-performance and reliable SiC thermoelectric power generation devices, understanding the influence of stacking faults on thermal conductivity is inevitable.…”

Section: Introductionmentioning

confidence: 99%

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Yin,

Shi,

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices. The existence of stacking faults, which originate from the “wrong” stacking sequences of Si–C bilayers, is a general feature of SiC. However, the effects of stacking faults on the thermal properties of SiC are not well understood. In this study, we evaluated the accuracy of Tersoff, MEAM, and GW potentials in describing the thermal transport of SiC. Additionally, the thermal conductivity of 3C/4H-SiC nanowires was investigated using non-equilibrium molecular dynamics simulations (NEMD). Our results show that thermal conductivity exhibits an increase and then saturation as the total lengths of the 3C/4H-SiC nanowires vary from 23.9 nm to 95.6 nm, showing the size effect of molecular dynamics simulations of the thermal conductivity. There is a minimum thermal conductivity, as a function of uniform period length, of the 3C/4H-SiC nanowires. However, the thermal conductivities of nanowires weakly depend on the gradient period lengths and the ratio of 3C/4H. Additionally, the thermal conductivity of 3C/4H-SiC nanowires decreases continuously from compressive strain to tensile strain. The reduction in thermal conductivity suggests that 3C/4H-SiC nanowires have potential applications in advanced thermoelectric devices. Our study provides insights into the thermal transport properties of SiC nanowires and can guide the development of SiC-based thermoelectric materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Yin,

Shi,

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…SiC is also the third-generation wide-bandgap semiconductor material developed after the first-generation elemental semiconductor material (Si) and the second-generation compound semiconductor material (GaAs, GaP, InP, etc). Due to its high critical breakdown field, high thermal conductivity, high carrier saturation concentration, and mobility, etc, it has enormous potential applications in high-temperature, high-frequency, high-power, optoelectronic, and radiationresistant devices [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Preparation and luminescent properties of SiC nanoparticles by strong pulse discharge in organic liquid phase environment

Du,

Wei,

2024

Mater. Res. Express

View full text Add to dashboard Cite

SiC nanoparticles with relatively uniform particle distribution were successfully prepared using a continuous strong pulse discharge method using hexamethyldisilane as the organic liquid phase environment. The samples were subjected to X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy (Raman) tests. XRD and Raman data indicate that the particle composition is mainly composed of β SiC. The electron microscope image illustrates particle-sizes ranging from 5-20 nm and existing in an agglomerated state. Further photoluminescence(PL) results indicate that the annealing temperature under vacuum conditions has a significant positive effect on the luminescence intensity.

show abstract

“…SiC ceramic is widely used as an important structural element in space reflector mirror blank materials [1], ballistic armor materials [2], electronic packaging [3], and nuclear fuel casing materials [4] due to its excellent mechanical strength, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance [5][6][7][8][9]. However, the brittleness of SiC makes it difficult to fabricate large and complicated SiC-based components, which severely restricts the use of SiC-based materials.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Shear Strength of SiC Joint Brazed with LiAlSiO4 Reinforced AgCuTi Composite Filler

Jian

Wang

et al. 2023

Metals

View full text Add to dashboard Cite

In this work, SiC ceramics were successfully brazed at 900 °C using a composite brazing filler, and the effects of holding time and LiAlSiO4 addition on the interfacial microstructure and mechanical properties of the joints were systematically investigated. The results showed that the brazed joints were devoid of obvious defects, and the joint structure was mainly composed of SiC/Ti5Si3/TiC + TiCu2 + TiO2 + LAS + LiAlSi2O6 + Cu (s, s) + Ag (s, s)/Ti5Si3/TiC/SiC. When the brazing temperature was 900 °C for 10 min and the LiAlSiO4 addition was 1 wt%, the SiC brazed joints reached a maximum shear strength of 106.47 MPa, which was 4.7 times higher than that of the joints without LiAlSiO4 addition under the same conditions. According to theoretical calculations, the addition of LAS can successfully reduce residual stresses in SiC brazed joints and enhance the joint strength.

show abstract

A novelty design for radiation resistance of SiC by recrystallization-induced stacking faults

Cited by 5 publications

References 23 publications

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Preparation and luminescent properties of SiC nanoparticles by strong pulse discharge in organic liquid phase environment

Microstructure and Shear Strength of SiC Joint Brazed with LiAlSiO4 Reinforced AgCuTi Composite Filler

Contact Info

Product

Resources

About