A Numerical Study of an Ellipsoidal Nanoparticles under High Vacuum Using the DSMC Method

Abstract

The semiconductor and display manufacturing process requires high precision. Therefore, inside the equipment, fine impurity particles affect the yield rate of production. However, since most manufacturing processes are performed under high-vacuum conditions, it is difficult to estimate particle flow with conventional analytical tools. In this study, high-vacuum flow was analyzed using the direct simulation Monte Carlo (DSMC) method, and various forces acting on fine particles in a high-vacuum flow field were calculated. To compute the computationally intensive DSMC method, GPU-based computer unified device architecture (CUDA) technology was used. The force acting on the particles in the high-vacuum rarefied gas region was verified using the results of previous studies, and the results were derived for the difficult-to-experiment region. An ellipsoid shape with an aspect ratio rather than a spherical shape was also analyzed. The change in drag force according to various aspect ratios was analyzed and compared with the results of the spherical shape under the same flow conditions.

Editorial for the Special Issue on Physics in Micro/Nano Devices: From Fundamental to Application

“…Liu et al proposed an accelerated algorithm that can efficiently calculate the light scattering of a single metal nanoparticle [ 4 ]. When it comes to nanoparticles, as the impurity nanoparticles affect the yield rate of semiconductor production, Jang et al conducted a numerical study of ellipsoidal nanoparticles under high vacuum using the direct simulation Monte Carlo method [ 5 ]. The motion of bubbles in an ultrasonic field is also a fundamental physical mechanism in most applications of acoustic cavitation.…”