A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

Hsieh, Shang-Wei; Kuo, Yen−Kuang

doi:10.1007/s00339-005-3386-y

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…While the I th and SE are important for efficient energy conversion, a high T 0 would allow the realization of thermo-electric cooler free MQW lasers [6] which in turn reduces the overall production cost. Throughout the years, various studies had been conducted to improve these figures of merit of InGaAlAs/InP MQW lasers [7][8][9], focusing on either the active region or the additional confinement structures, but a complete study on the separate confinement heterostructure of these lasers alone can hardly be found.…”

Section: Introductionmentioning

confidence: 99%

Separate confinement heterostructure design for InGaAlAs/InP multiple-quantum-well lasers: critical analysis and proposal of novel design

et al. 2010

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A thorough analysis on the separate confinement heterostructure (SCH) designed for 1.5-μm InGaAlAs/InP multiplequantum-well (MQW) lasers is presented. Simulation results show that the enhancement rates of the threshold current and the slope efficiency of graded-index SCH (GRINSCH) drop with the increasing number of graded layers. Hence, requirement on truly graded structure may be relieved, which eases the growth process and reduces the cost. The thickness of the GRINSCH has a profound impact on the laser's performance, whereby over 25 mA reduction in threshold current was deducible by optimizing this design parameter alone. The grading energy range of the GRINSCH is found to effectively reduce the carrier leakage at elevated temperature, resulting in improved threshold current's sensitivity to the temperature. However, the increased GRINSCH energy barrier may also bring detrimental effect to the slope efficiency. To overcome this problem, a non-symmetrical SCH (NS-SCH) structure with reduced n-SCH energy barrier is proposed. Simulation results show that laser structure with NS-SCH design has better light-current performance than the laser structure with electron stopper layer. The laser structure with NS-SCH exhibits 20% decrease in threshold current and 43% increase of maximum output power as compared to those of the reference laser structure.

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Section: Introductionmentioning

confidence: 99%

Separate confinement heterostructure design for InGaAlAs/InP multiple-quantum-well lasers: critical analysis and proposal of novel design

et al. 2010

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“…InP‐based laser diodes as highly reliable light sources operating at the wavelength of 1.3 µm have attracted a great deal of interest for many commercial applications in optical access networks, optical sensors, and optical interconnections. There have been steady efforts to realize λ ∼ 1.3 µm uncooled laser diodes with high output power and low threshold current 1–4. InGaAsP/InGaAsP multiple quantum well (MQW) laser structures with more flexibility in composition such as strain‐compensated and compressively strained layers, have been employed instead of conventional InGaAsP/InP MQW laser structures, leading to low threshold currents 5–8.…”

Section: Introductionmentioning

confidence: 99%

Device characteristics and metal–dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers

Leem

2010

Physica Status Solidi (a)

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The cavity length‐dependent characteristics of compressively strained InGaAsP/InGaAsP multiple quantum well planar buried heterostructure lasers operating at λ ∼ 1.3 µm were investigated under continuous‐wave mode. The uncoated 600 µm long laser exhibits Pmax = 33.6 mW and Ith = 12.9 mA at 25 °C with dλ/dT = 0.35 nm/K and dλ/dPe = 0.044 nm/mW, leading to stable beam characteristics of 19.7° (parallel) × 24.1° (perpendicular). From the inverse slope efficiency versus cavity length plot, the loss parameters of internal differential efficiency (ηi) and internal optical loss (αi) were extracted, i.e., ηi = 78% and αi = 10.6 cm−1. The transparent current density of Jtr = 0.12 kA/cm2 and modal gain of G = 49.5 cm−1 were also estimated from cavity length‐dependent threshold current density measurements. Metal–dielectric Au/Ti/SiO2 layers for high reflectivity (HR) coating were analyzed using theoretical calculations and experimental results. For the HR‐coated 600 µm long laser with Au (150 nm)/Ti (5 nm)/SiO2 (250 nm), Pmax increased up to 61 mW at 25 °C with a reduced Ith of 10.6 mA compared to the uncoated laser, providing an HR of about 94%.

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“…Furthermore, the electron spillover from QWs in these materials is still a problem at high temperatures. [4,5] In recent years, 1.3 µm lasers with InGaAsN/GaAs (with ∆𝐸 c = 0.79∆𝐸 g ) [6] and In-GaAs/GaAs quantum dots [7] have been studied to overcome those problems. However, the growth techniques are still quite pre-mature for the new materials compared to InGaAsP and AlGaInAs quaternary materials.…”

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confidence: 99%

Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AlGaInAs Lasers

Mao¹,

Wang²,

Yang-Hua³

et al. 2012

Chinese Phys. Lett.

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We investigate 1.3 µm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAlAs (barrier) on InP for high speed application, compared to the typical structures of InGaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier. We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells (QWs). The advances of the new QW design are mainly rooted in the large ratio between conduction-band and valence-band offsets (Δ𝐸c:Δ𝐸v = 7:1), higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3 µm lasers. Due to the low confinement energy of holes, non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced. The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.

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A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

Cited by 5 publications

References 24 publications

Separate confinement heterostructure design for InGaAlAs/InP multiple-quantum-well lasers: critical analysis and proposal of novel design

Separate confinement heterostructure design for InGaAlAs/InP multiple-quantum-well lasers: critical analysis and proposal of novel design

Device characteristics and metal–dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers

Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AlGaInAs Lasers

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