A numerical study of cluster center formation in neutron-irradiated silicon

Shi, Yi; Shen, D. X.; Wu, Feng‐Yao; Cheng, Kaixuan

doi:10.1063/1.345799

Cited by 12 publications

(6 citation statements)

References 11 publications

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“…For neutron damage, most of the displacements occur in the formation of the damage clusters, therefore these small volumes are expected to be rich in divacancy states. There is strong evidence that V 2 defects are formed by the combination of vacancies created in close proximity as opposed to the coupling of migrating vacancies from the displacement events of different incident particles 24,25 and theoretical calculations of defect cluster formation in radiation damaged silicon 26,27 predict a core of divacancies in the damage cluster (some of which may coalesce to form four-vacancy complexes 27 ).…”

Section: Protons Neutrons and Pions)mentioning

confidence: 99%

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Gill

Hall

MacEvoy

1997

Journal of Applied Physics

111

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High resistivity silicon particle detectors will be used extensively in experiments at the future CERN Large Hadron Collider where the enormous particle fluences give rise to significant atomic displacement damage. A model has been developed to estimate the evolution of defect concentrations during irradiation and their electrical behaviour according to Shockley-Read-Hall (SRH) semiconductor statistics. The observed increases in leakage current and doping concentration changes can be described well after gamma irradiation but less well after fast neutron irradiation. A possible non-SRH mechanism is considered, based on the hypothesis of charge transfer between clustered divacancy defects in neutron damaged silicon detectors. This leads to a large enhancement over the SRH prediction for V 2 acceptor state occupancy and carrier generation rate which may resolve the discrepancy.

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Section: Protons Neutrons and Pions)mentioning

confidence: 99%

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Gill

Hall

MacEvoy

1997

Journal of Applied Physics

111

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“…20 systems with an amorphous zone of ϳ10 Å in diameter and comprising ϳ50 defect atoms were created by this method. As defect clusters in Si are thought to be vacancy rich, 39,40 two variations were made to this scheme. In addition to the 20 created systems, two categories were added, one with an added vacancy ͑V͒ and another with an added divacancy ͑V 2 ͒ inside the amorphous zone.…”

Section: Methodsmentioning

confidence: 99%

Amorphous defect clusters of pure Si and type inversion in Si detectors

2010

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Si detectors subjected to energetic particle bombardment are known to undergo a deleterious type inversion from n type to p type. The effect is due to defects that trap electrons but the identity of the main responsible traps remains unknown. Using a combination of classical molecular-dynamics simulations and large-scale density-functional theory calculations, we show that amorphous defect clusters formed under particle bombardment are strong acceptors of electrons and may as such well explain the phenomenon.

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“…These three groups of levels might be related to , double vacancy and, perhaps, , respectively. Note that clusters at room temperature are believed to be composed mainly of vacancy aggregates, such as double vacancy and, possibly, higher order aggregates [25]. The interaction between oxygen, carbon and double-vacancy clusters has been invoked to account for radiation damage in high resistivity n-type silicon after proton irradiation [26]- [28].…”

Section: Resultsmentioning

confidence: 98%

PICTS analysis of extended defects in heavily irradiated silicon

Menichelli¹,

Borchi²,

Li³

et al. 2002

IEEE Trans. Nucl. Sci.

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We report the results of an experimental study on radiation-induced defects in silicon p + n diodes irradiated with 1-MeV neutrons up to a fluence of 2.3 10 15 cm 2 . Heavily irradiated silicon diodes have been studied by means of Photo Induced Current Transient Spectroscopy (PICTS) technique using a variable filling time. For every filling time, a dominant broad and structured peak has been found in the temperature range 200-300 K. Such a broad peak cannot be accounted for by considering isolated point defects, being consistent with a quasi-continuous distribution of deep levels inside the bandgap. In addition, it is observed that the spectral lineshape tends to broaden as the filling time is increased. The details of the lineshape modifications depend strongly on the irradiation fluence of the sample, in such a way that they cannot be explained only in terms of emissions from noninteracting electron states. Thus we suggest that the investigated broad peak should, at least in part, be generated by emission from extended defects, also known as clusters.

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A numerical study of cluster center formation in neutron-irradiated silicon

Cited by 12 publications

References 11 publications

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Amorphous defect clusters of pure Si and type inversion in Si detectors

PICTS analysis of extended defects in heavily irradiated silicon

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