A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Narushima, Satoru; Mizoguchi, Hiroshi; Shimizu, K.; Ueda, Kazushige; Ohta, Hiromichi; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

doi:10.1002/adma.200304947

Cited by 156 publications

(133 citation statements)

References 30 publications

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“…[66,67] High conductivity has also been shown experimentally in non-Cu metal oxides, most notably spinel-structured TCOs, such as NiCo 2 O 4 , [68,69] perovskites-structured TCOs, such as SrIn x Ti 1-x O 3 and Sr x La 1-x CrO 3 , [70,71] and amorphous or composite oxides, such as ZnO·Rh 2 O 3 and In:MoO 3 . [72,73] Other oxides, such as doped Cr 2 O 3 and Ba 2 BiTaO 6 , have promise but remain to be synthesized with high conductivities. [74,75] A second, more recently employed approach is to look beyond oxides.…”

Section: P-type Transparent Conductorsmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

364

288

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With the development of new generations of optoelectronic devices that combine high performance and novel functionalities (e.g., flexibility/bendability, adaptability, semi or full transparency), several classes of transparent electrodes have been developed in recent years. These range from optimized transparent conductive oxides (TCOs), which are historically the most commonly used transparent electrodes, to new electrodes made from nano‐ and 2D materials (e.g., metal nanowire networks and graphene), and to hybrid electrodes that integrate TCOs or dielectrics with nanowires, metal grids, or ultrathin metal films. Here, the most relevant transparent electrodes developed to date are introduced, their fundamental properties are described, and their materials are classified according to specific application requirements in high efficiency solar cells and flexible organic light‐emitting diodes (OLEDs). This information serves as a guideline for selecting and developing appropriate transparent electrodes according to intended application requirements and functionality.

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Section: P-type Transparent Conductorsmentioning

confidence: 99%

Transparent Electrodes for Efficient Optoelectronics

Morales‐Masis

Wolf

Woods‐Robinson

et al. 2017

Adv Elect Materials

364

288

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“…This is in contrast to earlier reports of the dependency of the conductivity on higher growth temperatures (>500 • C) 15 , and the requirement of crystallinity to retain p-type properties. 16 This also means that the Cu deficient nanocrystalline material is compatible with flexible substrates such as polyimides and flexible glass (typically <400 • C process temperatures). This is the best performing ptype TCM grown by solution methods to date (excluding reports on single-crystal substrates 17 ), surpassing the previous value of 151 µS.…”

mentioning

confidence: 99%

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Farrell

Norton

O'Dowd

et al. 2015

Applied Physics Letters

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In this letter we demonstrate a low temperature (≈ 345 • C) growth method for Cu deficient CuCrO 2 performed by spray pyrolysis using metal-organic precursors and a simple air blast nozzle. Smooth films were grown on glass substrates with a highest conductivity of 12 S/cm. The most conductive samples retain transparencies above 55% resulting in a figure of merit as high as 350 µS, which is the best performing p-type transparent conducting material grown by solution methods to date. Remarkably despite the nano-crystallinity of the films, properties comparable with crystalline CuCrO 2 are observed. No postannealing of the films is required in contrast to previous reports on crystalline material. The low processing temperature of this method means the material can be deposited on flexible substrates. As this is a solution based technique it is more attractive to industry as physical vapour deposition methods are slow and costly in comparison.p-type transparent conducting materials (TCMs) are sought after for optoelectronic devices. Currently commercially available n-type TCMs, such as indium tin oxide (ITO), possess conductivities as high as 1000 S/cm with transparencies greater than 80%. 1 Potential applications that require p-type materials with similar properties include transparent p-n junctions, which would allow for fully-transparent displays. 2 Alternatively, they can be used to minimize shunting as hole injection/extraction layers in light-emitting diodes/solar cells. 3,4 The main interest in this field originated from the potential of the delafossites with the A 1+ B 3+ O 2 lattice structure first highlighted in 1997 when CuAlO 2 was reported to exhibit ptype conductivity while maintaining high transparency. 5 Since then the field has extended to other materials such as oxychalcogenides, spinels and α-Cr 2 O 3 . 6-9 One of the delafossites, CuCrO 2 , has shown promise as a p-type TCM due to reports of high conductivity when doped with Mg. 10 However this is typically only achieved by physical vapour deposition (PVD) which is a relatively slow and costly technique in comparison to other depostion methods. CuCrO 2 has also been grown by chemical vapour deposition (CVD) using the metal-organic Acetylacetonate (acac) precursors Cr(acac) 3 and Cu(acac) 2 at 550 • C, resulting in polycrystalline films with conductivity of 0.86 S/cm (figure of merit (FOM) ≈ 45 µS). 11 Spray pyrolysis (SP) is an inexpensive technique that is suited to depositing films over a large area. Mg-doped films of CuCrO 2 have been synthesized by SP using the same acac precursors with the Mg(acac) 2 precursor for doping. Only after postannealing at 700 • C did they achieve conductivities of 0.6-1 S/cm. 12,13 CuCrO 2 :Zn grown by solgel processing show conductivities of around 0.47 S/cm after two postannealing steps. 14 The high temperature required by these methods is a major drawback for using a) Electronic mail: lefarrel@tcd.ie the material in practical devices. In this letter SP was used to grow thin (50-100 nm) Cu deficient CuCrO 2 film...

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“…2. The as-deposited IZO TFTs exhibit normally-on characteristics, originating from the fact that the IZO films contain many carriers due to a relatively large nonstoichiometric chemical composition, i.e., oxygen vacancies (20,21). After the postdeposition annealing in O 2 and N 2 was performed, the device appeared to switch characteristics.…”

Section: Resultsmentioning

confidence: 99%

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors

Chung¹,

Chang

Li³

et al. 2011

ECS Trans.

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This work shows the effects of post-deposition annealing atmosphere and duration on the properties of sol-gel derived amorphous indium zinc oxide thin film transistors (a-IZO TFTs). Two different post-deposition annealing atmospheres, nitrogen and oxygen, were used in this study. Experimental results showed that the O 2 -annealed devices showed better electrical characteristics than the N 2 -annealed samples. Under O 2 -annealing, field effect mobility was enhanced to 1.47 cm 2 /V s, the threshold voltage increased to -4.61 V and the subthreshold swing improved to 0.86 V/dec. Also, the transfer characteristics of a-IZO TFTs improve with annealing time. X-ray photoelectron spectroscopy (XPS) analysis indicated that the chemical composition of the IZO film was modified by the oxygen annealing.

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A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Cited by 156 publications

References 30 publications

Transparent Electrodes for Efficient Optoelectronics

Transparent Electrodes for Efficient Optoelectronics

Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature

Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors

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