A packaged, high-lifetime ohmic MEMS RF switch

Majumder, S. B.; Lampen, James; Morrison, Rebecca; Maciel, J.J.

doi:10.1109/mwsym.2003.1210537

Cited by 83 publications

(26 citation statements)

References 4 publications

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“…Typical DC contact resistance measurements are 1 [7], and open-state coupling capacitances as low as 2 fF have been reported [7]. Switching speeds ranging from 3 to 6 s have been reported [4,16]. Most switches are electrostatically actuated, which results in sub-W power dissipation levels, and cold switching cycle lifetimes are approaching 100 billion.…”

Section: Discussionmentioning

confidence: 99%

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Si-based RF MEMS components.

Stevens¹,

Nordquist²,

Baker³

et al. 2005

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Radio frequency microelectromechanical systems (RF MEMS) are an enabling technology for next-generation communications and radar systems in both military and commercial sectors. RF MEMS-based reconfigurable circuits outperform solid-state circuits in terms of insertion loss, linearity, and static power consumption and are advantageous in applications where high signal power and nanosecond switching speeds are not required. We have demonstrated a number of RF MEMS switches on high-resistivity silicon (high-R Si) that were fabricated by leveraging the volume manufacturing processes available in the Microelectronics Development Laboratory (MDL), a Class-1, radiation-hardened CMOS manufacturing facility. We describe novel tungsten and aluminum-based processes, and present results of switches developed in each of these processes. Series and shunt ohmic switches and shunt capacitive switches were successfully demonstrated. The implications of fabricating on high-R Si and suggested future directions for developing low-loss RF MEMS-based circuits are also discussed.

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Section: Discussionmentioning

confidence: 99%

“…Switch insertion loss and isolation of 0.1 dB and 30 dB, respectively, from 0-40 GHz have been demonstrated [7]. W-band operation has also been demonstrated [15] and cycle lifetimes are presently approaching 100 billion cold switching cycles [16].…”

Section: Introductionmentioning

confidence: 95%

Si-based RF MEMS components.

Stevens¹,

Nordquist²,

Baker³

et al. 2005

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“…For the efficient performance of the switch we need the less actuation voltage and huge isolation [15].Less actuation voltage can be achieved by reducing the spring constant [16], hence it is the important factor of the switch. It can be by using the formula.…”

Section: Spring Constantmentioning

confidence: 99%

Performance of analysis crab leg based RF MEMS switch for defense and aerospace applications

Siddaiah¹,

Prasad²,

Pravallika³

et al. 2017

IJET

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In this paper the design and modeling of capacitive shunt switch for k-ka band applications is presented. The proposed model for this design is the crab leg flexure. In order to reduce the squeeze film air damping, the perforated switch with reduced spring constant is designed. Analysis of designed switch has been carried out on the various parameters of the switch such as damping factor, switching time, quality factor and Eigen frequencies in order to design a reliable switch. The results indicate that the obtained pull in voltage is 3.1V for the dielectric gap of 1m and spring constant of 2.95N/m 2 . Switching time is observed as 1.2s and 2.15s for the gap of 1m and 1.5m respectively. The capacitance ratio i.e. Cdown/Cup KHz. Return loss is calculated as-44.85dB at a frequency of 1GHz and -25.68dB at a frequency of 27.5GHz and insertion loss is obtained as -0.0447db at 1GHz and -1.0379dB at 27.5GHz. The maximum peak isolation is observed as -59.5dB at 1GHz frequency and -71dB at 27.5GHz frequency.

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“…As low as 100 V of human-body model was found to produce failure [5]. Hot switching under 10 mW of RF power can reduce the switch lifetime from billions to millions of cycles [6]. In comparison, capacitive switches usually are immune to electrostatic discharge and can withstand hot switching of approximately 1 W [7].…”

Section: Failure Mechanisms Of Ohmic Switchesmentioning

confidence: 99%

Reliability of Electrostatically Actuated RF MEMS Switches

Hwang

2007

2007 IEEE International Workshop on Radio-Frequency Integration Technology

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-The reliability of electrostatically actuated RF MEMS switches is reviewed with emphasis on recent advancements. Both ohmic and capacitive switches have been operated for more 100-billion cycles without failure. When they do fail, ohmic switches tend to fail catastrophically by stiction, whereas capacitive switches often degrade gradually through charging of their dielectric insulators. Approaches to mitigate and model dielectric charging are then presented.

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A packaged, high-lifetime ohmic MEMS RF switch

Cited by 83 publications

References 4 publications

Si-based RF MEMS components.

Si-based RF MEMS components.

Performance of analysis crab leg based RF MEMS switch for defense and aerospace applications

Reliability of Electrostatically Actuated RF MEMS Switches

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