A Parallel Implementation of a Two-Dimensional Hydrodynamic Model for Microwave Semiconductor Device Including Inertia Effects in Momentum Relaxation

Alsunaidi, M.A.; Hammadi, S.; El-Ghazaly, S.M.

doi:10.1002/(sici)1099-1204(199703)10:2<107::aid-jnm263>3.0.co;2-f

Cited by 16 publications

(2 citation statements)

References 14 publications

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“…Several different choices for r can be found in the literature, while many other authors 25,26 neglect heat conduction in their models.…”

Section: B Balance-equation Modelsmentioning

confidence: 99%

“…To describe the propagation of space charge waves in n-GaAs thin films, the hydrodynamic models have been widely studied. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] We consider three different two-valley quasihydrodynamic models for space charge wave propagation, intended for electron transport, in GaAs. They are simple DD model, detailed balance model, 15 and averaged balance model.…”

Section: Nonstationary Carrier Transport In N-gaas Thin Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Nonstationary effects of the space charge in semiconductor structures

García-Barrientos

Grimalsky

Gutierrez-D

et al. 2009

Journal of Applied Physics

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Space charge effects in carrier escape from single quantum well structuresA study of nonstationary effects of space charge in semiconductor structures, such as nonlinear wave interactions in active media operating in the microwave and millimeter wave range, is presented in this paper. Also, an exhaustive analysis of different models describing the propagation of space charge waves is carried out. Furthermore, we have concluded that the most appropriate nonlocal model to describe the space charge wave propagation in thin films possessing negative differential conductivity is the detailed balance model.

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“…Several different choices for r can be found in the literature, while many other authors 25,26 neglect heat conduction in their models.…”

Section: B Balance-equation Modelsmentioning

confidence: 99%

Section: Nonstationary Carrier Transport In N-gaas Thin Filmsmentioning

confidence: 99%

Nonstationary effects of the space charge in semiconductor structures

García-Barrientos

Grimalsky

Gutierrez-D

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

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Energy model for optically controlled MESFETs

Alsunaidi

2000

Microw. Opt. Technol. Lett.

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An energy‐based transport model for the analysis of illuminated microwave active devices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the conventional local‐field mobility models based on drift‐diffusion formulations. It is shown that the drift‐diffusion models lose their applicability in submicrometer gate‐length devices. The presented time‐domain model has a great potential in the analysis of microwave devices under ac and pulsed illumination conditions. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 48–52, 2000.

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Numerical investigations of optically induced Gunn oscillations in MESFET-like structures

Alsunaidi

2000

Microw. Opt. Technol. Lett.

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The availability of an optically controlled integrated microwave source that is compatible with MMIC technology is highly desirable. In this paper, a time‐domain energy‐based transport model is used for the investigation of the generation of sustained Gunn domains inside a MESFET structure in response to incident light. The time‐domain investigations include the effects of optical flux density and biasing conditions on the creation and properties of the induced oscillations. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 72–75, 2001.

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A Parallel Implementation of a Two-Dimensional Hydrodynamic Model for Microwave Semiconductor Device Including Inertia Effects in Momentum Relaxation

Cited by 16 publications

References 14 publications

Nonstationary effects of the space charge in semiconductor structures

Nonstationary effects of the space charge in semiconductor structures

Energy model for optically controlled MESFETs

Numerical investigations of optically induced Gunn oscillations in MESFET-like structures

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