A parallel‐injection injection locked frequency divider in 0.35‐μm SiGe HBT process

Abstract

reduced voltage headroom across each transistor, this LNA has worst linearity than ours. The figure of merits (FOM1 and FOM2) defined in Ref. 15 are used to compare the performance of the LNAs. Based on the FOMs calculated in Table 2, the presented work shows comparable performances to the other designs. CONCLUSIONSAn ultra-low voltage single-stage noncascode LNA was presented. With the same structure, the conventional CSLNA normally has better NF but lower reverse-isolation. The basic CGLNA on the other hand has better reverse-isolation but much higher NF. The CCC technique introduces the self-cancellation of output-to-input feedback, therefore solves the reverse-isolation problem in CSLNA. The LNA using this technique can also achieve NF much lower than of the CGLNA. Novel analysis on the reverse-isolation and input matching of the low-voltage CCCLNA was performed. Other analysis on gain and NF was also presented to show the advantages over the conventional CS and CGLNA. The design is very suitable for low supply voltage such as 0.6 V. At 2.4 GHz, it has good reverse-isolation of À35 dB and good input matching of À22 dB. The total voltage gain is 14 dB. It draws only 0.83 mA from 0.6 V supply voltage and produces only 3.55 dB NF. The total power consumption is only 0.5 mW. ABSTRACT: A high operation frequency multimodulus injection locked frequency divider (ILFD) has been proposed and it is based on a crosscoupled voltage-controlled oscillator with the parallel-injection heterojunction bipolar transistors (HBTs), and was fabricated in the 0.35 lm silicon-germanium (SiGe) 3P3M BiCMOS technology. The die